2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6220 published specications.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or more
frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc
Table 1. RF Electrical Characteristics
Parameter Min Typ. Max Unit Comment
Conversion Gain, Gain 14 16 18.5 dB
Operational Frequency, Freq 30 GHz
Output Power, Pout 18.5 21 21.5 dBm Tested at 29.25 and 30 GHz
Fundamental Suppression, FS 60 dBc
3rd Harmonic Suppression, 3H Sup 50 dBc
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description Min. Typical Max. Unit Comments
Drain Supply Current, Id 200 250 mA Vd = 4.5 V, Under any RF power drive and
temperature
Drain Supply Voltage, Vd 3.5 4.5 5 V
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, qjc
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
qjc = 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Pin Min. Max. Unit Comments
Drain to Ground Supply Voltage Vdd 5 V
Drain Current Idd 300 mA
RF CW Input Power Pin 15 dBm CW
Channel Temperature +150 °C
Storage Temperature -65 +150 °C
Maximum Assembly Temperature +260 °C 20 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
