Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
www.vishay.com
7
Vishay Siliconix
DG540, DG541, DG542
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Figure 2. Switching Time
R
L
R
L
+ r
DS(on)
V
O
= V
S
C
L
(includes fixture and stray capacitance)
V-
V+
IN
S
C
L
35 pF
D
3 V
R
L
1 kΩ
V
O
- 3 V
GND
+ 15 V
3 V
0
90 %
50 %
t
OFF
t
ON
V
S
t
r
< 20 ns
t
f
< 20 ns
Logic
Input
Switch
Input
Switch
Output
Figure 3. Charge Injection
ON ONOFF
V
O
ΔV
O
IN
X
ΔV
O
= measured voltage error due to charge injection
The charge injection in coulombs is
ΔQ = C
L
x DV
O
C
L
1000 pF
3 V
V
g
V
O
- 3 V
D
GND
V+
R
g
S
IN
V-
+ 15 V
Figure 4. Off Isolation
S
IN
R
L
75 Ω
D
R
g
= 75 Ω
V
S
V
O
0 V, 2.4 V
Off Isolation = 20 log
V
S
V
O
V+
- 3 V
GND V-
C
C
+ 15 V
C = RF Bypass
Figure 5. Bandwidth
C
+ 15 V
S
R
L
50 Ω
D
R
g
= 50 Ω
V
S
V
O
- 3 V
GND
V+
V-
C
IN
0 V, 2.4 V
www.vishay.com
8
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
Vishay Siliconix
DG540, DG541, DG542
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
APPLICATIONS
Device Description
The DG540, DG541, DG542 family of wideband switches
offers true bidirectional switching of high frequency analog or
digital signals with minimum signal crosstalk, low insertion
loss, and negligible non-linearity distortion and group delay.
Built on the Siliconix D/CMOS process, these "T" switches
provide excellent off-isolation with a bandwidth of around
500 MHz (350 MHz for DG541). Silicon-gate D/CMOS
processing also yields fast switching speeds.
An on-chip regulator circuit maintains TTL input compatibility
over the whole operating supply voltage range, easing
control logic interfacing.
Circuit layout is facilitated by the interchangeability of source
and drain terminals.
Frequency Response
A single switch on-channel exhibits both resistance (R
DS(on)
)
and capacitance (C
S(on)
). This RC combination has an
attenuation effect on the analog signal – which is frequency
dependent (like an RC low-pass filter). The - 3-dB bandwidth
of the DG540 is typically 500 MHz (into 50 ). This measured
figure of 500 MHz illustrates that the switch channel can not
be represented by a two stage RC combination. The on
capacitance of the channel is distributed along the on-
resistance, and hence becomes a more complex multi stage
network of R’s and C’s making up the total R
DS(on)
and
C
S(on)
. See Application Note AN502 for more details.
Off-Isolation and Crosstalk
Off-isolation and crosstalk are affected by the load
resistance and parasitic inter-electrode capacitances. Higher
off-isolation is achieved with lower values of R
L
. However,
low values of R
L
increase insertion loss requiring gain
adjustments down the line. Stray capacitances, even a
fraction of 1 pF, can cause a large crosstalk increase. Good
layout and ground shielding techniques can considerably
improve your ac circuit performance.
Figure 6. All Hostile Crosstalk
S
2
S
3
S
4
X
TA L K( A H)
= 20 log
10
V
OUT
V
IN
V
O
10 Ω
R
L
75 Ω
IN
X
S
1
V+
V-
+ 15 V
- 15 V
C
C
GND
2.4 V
D
2
D
3
D
1
D
4
R
L
R
L
R
L
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
www.vishay.com
9
Vishay Siliconix
DG540, DG541, DG542
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Power Supplies
A useful feature of the DG54X family is its power supply
flexibility. It can be operated from a single positive supply
(V+) if required (V- connected to ground).
Note that the analog signal must not exceed V- by more than
- 0.3 V to prevent forward biasing the substrate p-n junction.
The use of a V- supply has a number of advantages:
1. It allows flexibility in analog signal handling, i.e., with
V- = - 5 V and V+ = 12 V; up to ± 5 V ac signals can
be controlled.
2. The value of on capacitance [C
S(on)
] may be reduced.
A property known as ‘the body-effect’ on the DMOS
switch devices causes various parametric effects to
occur. One of these effects is the reduction in C
S(on)
for an increasing V body-source. Note, however, that
to increase V- normally requires V+ to be reduced
(since V+ to V- = 21 V max.). Reduction in V+ causes
an increase in R
DS(on)
, hence a compromise has to
be achieved. It is also useful to note that optimum
video linearity performance (e.g., differential phase
and gain) occurs when V- is around - 3 V.
3. V- eliminates the need to bias the analog signal using
potential dividers and large coupling capacitors.
Decoupling
It is an established RF design practice to incorporate
sufficient bypass capacitors in the circuit to decouple the
power supplies to all active devices in the circuit. The
dynamic performance of the DG54X is adversely affected by
poor decoupling of power supply pins. Also, of even more
significance, since the substrate of the device is connected
to the negative supply, adequate decoupling of this pin is
essential.
Rules:
1. Decoupling capacitors should be incorporated on all
power supply pins (V+, V-). (See Figure 7.)
2. They should be mounted as close as possible to the
device pins.
3. Capacitors should have good high frequency
characteristics - tantalum bead and/or monolithic
ceramic types are adequate.
Suitable decoupling capacitors are 1- to 10 µF
tantalum bead, plus 10- to 100 nF ceramic.
Board Layout
PCB layout rules for good high frequency performance must
be observed to achieve the performance boasted by the
DG540. Some tips for minimizing stray effects are:
1. Use extensive ground planes on double sided PCB,
separating adjacent signal paths. Multilayer PCB is
even better.
2. Keep signal paths as short as practically possible,
with all channel paths of near equal length.
3. Careful arrangement of ground connections is also
very important. Star connected system grounds
eliminate signal current flowing through ground path
parasitic resistance from coupling between channels.
Figure 7. Supply Decoupling
+
+
- 3 V
GNDs
+ 15 V
DG540
V+
V-
S
1
S
2
S
3
S
4
D
1
D
2
D
3
D
4
C
1
C
2
C
1
C
2
C
1
= 10 μ F Tantalum
C
2
= 0.1 μ F Ceramic

DG542AP

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Video Switch ICs SPDT Wideband T-Sw
Lifecycle:
New from this manufacturer.
Delivery:
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