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Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
Vishay Siliconix
DG540, DG541, DG542
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 3 V
V
INH
= 2 V, V
INL
= 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffixes
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
V
ANALOG
V- = - 5 V, V+ = 12 Full - 5 5 - 5 5 V
Drain-Source
On-Resistance
R
DS(on)
I
S
= - 10 mA, V
D
= 0 V
Room
Full
30
60
100
60
75
R
DS(on)
Match R
DS(on)
Room 2 6 6
Source Off Leakage Current
I
S(off)
V
S
= 0 V, V
D
= 10 V
Room
Full
- 0.05
- 10
- 500
10
500
- 10
- 100
10
100
nADrain Off Leakage Current
I
D(off)
V
S
= 10 V, V
D
= 0 V
Room
Full
- 0.05
- 10
- 500
10
500
- 10
- 100
10
100
Channel On Leakage Current
I
D(on)
V
S
= V
D
= 0 V
Room
Full
- 0.05
- 10
- 1000
10
1000
- 10
- 100
10
100
Digital Control
Input Voltage High
V
INH
Full 2 2
V
Input Voltage Low
V
INL
Full 0.8 0.8
Input Current
I
IN
V
IN
= GND or V+
Room
Full
0.05 - 1
- 20
1
20
- 1
- 20
1
20
µA
Dynamic Characteristics
On State Input Capacitance
e
C
S(on)
V
S
= V
D
= 0 V
Room 14 20 20
pF
Off State Input Capacitance
e
C
S(off)
V
S
= 0 V
Room 2 4 4
Off State Output Capacitance
e
C
D(off)
V
D
= 0 V
Room 2 4 4
Bandwidth BW
R
L
= 50 , See Figure 5
Room 500
MHz
Tur n - O n T i m e
t
ON
R
L
= 1 k
C
L
= 35 pF
50 % to 90 %
See Figure 2
DG540
DG541
Room
Full
45
70
130
70
130
ns
DG542
Room
Full
55
100
160
100
160
Tur n - O f f T i m e
t
OFF
DG540
DG541
Room
Full
20
50
85
50
85
DG542
Room
Full
25
60
85
60
85
Charge Injection Q
C
L
= 1000 pF, V
S
= 0 V
See Figure 3
Room - 25 pC
Off Isolation OIRR
R
IN
= 75 R
L
= 75
f = 5 MHz
See Figure 4
DG540 Room - 80
dB
DG541 Room - 60
DG542 Room - 75
All Hostile Crosstalk
X
TA LK (A H)
R
IN
= 10 , R
L
= 75
f = 5 MHz, See Figure 6
Room - 85
Power Supplies
Positive Supply Current I+
All Channels On or Off
Room
Full
3.5 6
9
6
9
mA
Negative Supply Current I-
Room
Full
- 3.2 - 6
- 9
- 6
- 9
