6. Inputs are terminated to V
DD
/2. Input current is dependent on terminating resistance se-
lected in register.
8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
Electrical Specifications
PDF: 09005aef83a13f4c
ksf36c1gx72pz.pdf - Rev. K 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
DRAM Operating Conditions
PDF: 09005aef83a13f4c
ksf36c1gx72pz.pdf - Rev. K 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision M)
Values are for the MT41K512M4 DDR3L SDRAM only and are computed from values specified in the1.35V 2Gb (512 Meg x
4) component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1296 1206 1116 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
1566 1476 1386 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
1188 1008 828 mA
Precharge quiet standby current I
DD2Q
2
1188 1008 828 mA
Precharge standby current I
DD2N
2
1260 1080 900 mA
Precharge standby ODT current I
DD2NT
1
936 846 756 mA
Active power-down current I
DD3P
2
1692 1512 1332 mA
Active standby current I
DD3N
2
1872 1692 1512 mA
Burst read operating current I
DD4R
1
2466 2196 1926 mA
Burst write operating current I
DD4W
1
2286 2016 1746 mA
Refresh current I
DD5B
1
3636 3546 3456 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 432 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
540 540 540 mA
All banks interleaved read current I
DD7
1
4176 3906 3636 mA
Reset current I
DD8
2
504 504 504 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83a13f4c
ksf36c1gx72pz.pdf - Rev. K 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT36KSF1G72PZ-1G6K1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR3 8GB RDIMM
Lifecycle:
New from this manufacturer.
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