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HSCH-5314

P1-P3P4-P6
Features
• Platinum tri-metal system
High temperature stability
• Silicon nitride passivation
Stable, reliable performance
• Low noise figure
Guaranteed 7.5 dB at 26 GHz
• High uniformity
Tightly controlled process insures uniform RF
characteristics
• Rugged construction
4 grams minimum lead pull
• Low capacitance
0.10 pF max. at 0 V
• Polyimide scratch protection
Description
These beam lead diodes are constructed using a metal-
semiconductor Schottky barrier junction. Advanced
epitaxial techniques and precise process control insure
uniformity and repeatability of this planar passivated
microwave semiconductor. A nitride passivation layer
provides immunity from contaminants which could
otherwise lead to I
R
drift.
The Avago beam lead process allows for large beam
anchor pads for rugged construction (typical 6 gram
pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline
or microstrip circuits. Its small physical size and
uniform dimensions give it low parasitics and repeatable
RF characteristics through K-band.
The basic medium barrier devices in this family are DC
tested HSCH-5310 and -5312. Equivalent low barrier
devices are HSCH-5330 and -5332. Batch matched
versions are available as HSCH-5331.
The HSCH-5340 is selected for applications requiring
guaranteed RF-tested performance up to 26 GHz. The
HSCH-5314 is rated at 7.2 dB maximum noise figure at
16 GHz.
Assembly Techniques
Thermocompression bonding is recommended. Welding
or conductive epoxy may also be used. For additional
information, see Application Note 979, The Handling
and Bonding of Beam Lead Devices Made Easy, or
Application Note 993, Beam Lead Device Bonding to
Soft Substances.
Outline 07
HSCH-53xx Series
Beam Lead Schottky Diodes for Mixers and Detectors
(1-26 GHz)
Data Sheet
CATHODE
GOLD LEADS
DIMENSIONS IN µm (1/1000 inch)
135 (5)
90 (3)
130 (5)
100 (4)
135 (5)
90 (3)
225 (9)
170 (7)
310 (12)
250 (10)
225 (9)
200 (8)
30 MIN (1)
SILICON
GLASS
710 (28)
670 (26)
60 (2)
40 (1)
8 Min. (.3)
2
Maximum Ratings
Pulse Power Incident at T
A
= 25°C ........................................................ 1 W
Pulse Width = 1 ms, Du = 0.001
CW Power Dissipation at T
A
= 25°C ............................................... 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
– Operating Temperature Range ............................. -65°C to +175 °C
T
STG
– Storage Temperature Range ................................... -65°C to +200°C
Minimum Lead Strength ...................................... 4 grams pull on any lead
Diode Mounting Temperature .............................. +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
I
F
Min. Max. Max.
Max. Impedance Break- Dynamic Total Max. Max.
Part Noise Z
IF
(
ΩΩ
ΩΩ
Ω) down Resis- Capaci- Forward Leakage
Number Figure Max. Voltage tance tance Voltage Current
HSCH- Barrier NF (dB) Min. Max. SWR V
BR
(V) R
D
(
ΩΩ
ΩΩ
Ω)C
T
(pF) V
F
(mV) I
R
(nA)
5314 Medium 7.2 at 200 400 1.5:1 4 16 0.15 500 100
16 GHz
5340 Low 7.5 at 150 350 20 0.10 375 400
26 GHz
Test DC Load Resistance - 0 Ω I
R
≤ 10 µAI
F
= 5 mA V
R
= 0 V I
F
= 1 mA V
R
= 1 V
Conditions LO Power = 1 mW f = 1 MHz
I
F
= 30 MHz, 1.5 dB NF
*Minimum batch size 20 units.
Note:
1. C
T
= C
J
+ 0.02 pF (fringing cap).
Table IA. Electrical Specifications for RF Tested Diodes at T
A
= 25°C
3
Minimum Maximum Maximum Maximum Maximum
Part Batch* Breakdown Dynamic Total Forward Leakage
Number Matched Voltage Resistance Capacitance Voltage Current
HSCH- HSCH- Barrier V
BR
(V) R
D
(
ΩΩ
ΩΩ
Ω)C
T
(pF) V
F
(mV) I
R
(nA)
5312 Medium 4 16 0.15 500 100
5310 20 0.10
5332 Low 4 16 0.15 375 400
5330 5331 20 0.10
Test ∆V
F
≤ 15 mV I
R
≤ 10 µAI
F
= 5 mA V
R
= 0 V I
F
= 1 mA V
R
= 1 V
Conditions @ 5 mA f = 1 MHz
*Minimum batch size 20 units.
Table IB. Electrical Specifications for DC Tested Diodes at T
A
= 25°C
SPICE Parameters
HSCH-5312 HSCH-5330
Parameter Units HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332
B
V
V 555 5
C
JO
pF 0.13 0.09 0.09 0.13
E
G
eV 0.69 0.69 0.69 0.69
I
BV
A 10E-5 10E-5 10E-5 10E-5
I
S
A3 x 10E-10 3 x 10E-10 4 x 10E-8 4 x 10E-8
N 1.08 1.08 1.08 1.08
R
S
Ω 91313 9
P
B
V 0.65 0.65 0.5 0.5
P
T
222 2
M0.50.50.5 0.5
Typical Detector Characteristics at T
A
= 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter Symbol Typical Value Units Test Conditions
Tangential Sensitivity TSS –54 dBm 20 µA Bias, R
L
= 100 kΩ
Video Bandwidth = 2 MHz
Voltage Sensitivity γ 6.6 mV/µWf = 10 GHz
Video Resistance R
V
1400 Ω
Low Barrier (Zero Bias)
Parameter Symbol Typical Value Units Test Conditions
Tangential Sensitivity TSS –44 dBm Zero Bias, R
L
= 10 MΩ
Video Bandwidth = 2 MHz
Voltage Sensitivity γ 10 mV/µWf = 10 GHz
Video Resistance R
V
1.8 MΩ
P1-P3P4-P6

HSCH-5314

Mfr. #:
Buy HSCH-5314
Manufacturer:
Broadcom / Avago
Description:
RF Detector 1-26GHz
Lifecycle:
New from this manufacturer.
Delivery:
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