IXTK33N50 Datasheet IXTK33N50 | P1-P3

1 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 5 mA 500 V

BV

DSS

temperature coefficient 0.087 %/K

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2.0 4.0 V

V

GS(th)

temperature coefficient -0.25 %/K

I

GSS

V

GS

= ±20 V DC, V

DS

= 0 ±100 nA

I

DSS

V

DS

= 0.8 V

DSS

T

J

= 25°C 200 µA

V

GS

= 0 V T

J

= 125°C 3 mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

0.17 Ω

Symbol Test conditions Maximum ratings

V

DSS

T

J

= 25°C to 150°C 500 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1.0 MΩ 500 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 33 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

132 A

P

D

T

C

= 25°C 416 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d Mounting torque 1.13/10 Nm/lb.in.

Weight 10 g

Max lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

N-Channel Enhancement Mode

S

G

D

G = Gate D = Drain

S = Source TAB = Drain

TO-264 AA

95513C (4/97)

Features

• Low R

DS (on)

HDMOS

TM

process

• Rugged polysilicon gate cell

structure

• International standard package

• Fast switching times

Applications

• Motor controls

• DC choppers

• Uninterruptable Power Supplies

(UPS)

• Switch-mode and resonant-mode

Advantages

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

• High power density

Preliminary data

D (TAB)

IXTK 33N50 V

DSS

= 500 V

I

D (cont)

= 33 A

R

DS(on)

= 0.17

ΩΩ

Ω

High Current

MegaMOS

TM

FET

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

IXTK 33N50

Symbol Test Conditions Characteristic values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 24 S

C

iss

4900 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 690 pF

C

rss

300 pF

t

d(on)

53 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

30 ns

t

d(off)

R

G

= 1 Ω (External) 140 ns

t

f

40 ns

Q

g(on)

250 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

30 nC

Q

gd

115 nC

R

thJC

0.30 K/W

R

thCK

0.15 K/W

Source-Drain Diode Ratings and Characteristics

(T

J

= 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 33 A

I

SM

Repetitive; pulse width limited by T

JM

132 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= I

S

, -di/dt = 100 A/µs, V

R

= 100 V 850 ns

TO-264 AA Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

V

GS

- Volts

2345678

I

D

- Amperes

0

10

20

30

40

50

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

5

10

15

20

25

30

35

40

T

J

- Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

I

D

= 16.5 A

I

D

- Amperes

0 1020304050607080

R

DS(ON)

- Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

V

DS

- Volts

048121620

I

D

- Amperes

0

10

20

30

40

50

V

DS

- Volts

0 4 8 12 16 20

I

D

- Amperes

0

10

20

30

40

50

60

70

80

6V

5V

T

J

= 25°C

V

GS

= 10 V

V

GS

= 10 V

9 V

8 V

T

J

= 125°C

V

GS

= 10 V

T

J

= 25°C

7V

6V

5V

T

J

= 25

o

C

I

D

= 33 A

T

J

= 125°C

T

J

= 125

o

C

V

GS

= 10 V

9 V

8 V

7 V

Figure 1. Output Characteristics at 25

O

C Figure 2. Output Characteristics at 125

O

C

Figure 3. R

DS(on)

normalized to 16.5A/25

O

C vs. I

D

Figure 5. Drain Current vs. Case Temperature

Figure 6. Admittance Curves

Figure 4. R

DS(on)

normalized to 16.5A/25

O

C vs. T

J

IXTK 33N50

IXTK33N50

IXTK33N50

Products related to this Datasheet