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BAV70SH6827XTSA1

P1-P3P4-P6P7-P9P10-P12
2007-09-19
1
BAV70...
Silicon Switching Diode
• For high-speed switching applications
• Common cathode configuration
• BAV70S / U: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAV70
BAV70W
BAV70S
BAV70U
!
,
,
,
!
"
#$
,
, !
, "
Type Package Configuration Marking
BAV70
BAV70S
BAV70U
BAV70W
SOT23
SOT363
SC74
SOT323
common cathode
double common cathode
double common cathode
common cathode
A4s
A4s
A4s
A4s
1
Pb-containing package may be available upon special request
2007-09-19
2
BAV70...
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 ms
t = 1 s single
t = 1 s double
I
FSM
4.5
1
0.5
0.75
A
Total power dissipation
BAV70, T
S
≤ 33°C
BAV70S, T
S
≤ 85°C
BAV70U, T
S
≤ 90°C
BAV70W, T
S
≤ 103°C
P
tot
250
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
BAV70
BAV70S
BAV70U
BAV70W
R
thJS
≤ 460
≤ 260
≤ 240
≤ 190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-09-19
3
BAV70...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85 - - V
Reverse current
V
R
= 70 V
V
R
= 25 V, T
A
= 150 °C
V
R
= 70 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
0.15
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 1.5 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns, C = 0.05pF
P1-P3P4-P6P7-P9P10-P12

BAV70SH6827XTSA1

Mfr. #:
Buy BAV70SH6827XTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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