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S70YR

P1-P2
V
RRM
= 100 V - 1600 V
I
F
= 70 A
Features
• High Surge Capability DO-5 Package
• Types up to 1600 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
S70Y (R)S70V (R)
1400 1600
S70V thru S70YR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
-65 to 150
S70V (R) S70Y (R)
1.1 1.1
-65 to 150
-65 to 150
A
990
1400
70
1250
1130
1600
70
1250
I
R
V
F
V
R
= 100 V, T
j
= 25 °C
I
F
= 70 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
-65 to 150
Reverse current
V
R
= 100 V, T
j
= 150 °C
V
10
4.5
10
4.5
0.65 0.65
www.genesicsemi.com
1
S70V thru S70YR
www.genesicsemi.com
2
P1-P2

S70YR

Mfr. #:
Buy S70YR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 1600V 70A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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