SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE FMMT451
PARTMARKING DETAIL 551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Base Current I
B
-200 mA
Power Dissipation at T
amb
=25°C P
tot
500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80 V
I
C
=-100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-60 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-0.1
µA
V
CB
=-60V
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 V I
C
=-150mA, I
B
=-15mA*
Static Forward Current
Transfer Ratio
h
FE
50
10
150 I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
25 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT551
C
B
E
3 - 130 3 - 129
FMMT551
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I - Collector Current (Amps)
V
-
(V
ol
t
s)
I -
Collector Current (Amps)
V
BE(on)
v I
C
V
-
(V
ol
t
s)
I -
Collector Current (Amps)
h
FE
v I
C
h
-
Norm
al
i
sed
G
ai
n (
%)
I -
Collector Current (Amps)
V
-
(V
ol
t
s)
V
BE(sat)
v I
C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V 100V
µ
1V
0.01
0.1V
10
