MX1N8176US

T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 4 of 6
1N8149US 1N8182US
PULSE TIME (tp) ms to 50% decay point in Figure 2
FIGURE 1
PEAK PULSE POWER VS. PULSE TIME
t Time ms
FIGURE 2
10/1000 s CURRENT IMPULSE WAVEFORM
I
PP
Peak Pulse Current - % I
PP
PEAK PULSE POWER (P
PP
) kW
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 5 of 6
1N8149US 1N8182US
T
A
Ambient Temperature
o
C
FIGURE 3
DERATING CURVE
The TVS low capacitance device configuration described in this data sheet is shown in Figure 4 involving a TVS and a unique
diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS
devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure 4
specified in this data sheet.
FIGURE 4 FIGURE 5
Low Capacitance TVS Bidirectional configuration
(2 Low Capacitance TVS
devices in anti-parallel)
PULSE CONDITIONS
DEFINED IN FIGURES 1 & 2
Peak Pulse Power (P
PP
) or current I
PP
(surge) in percent of 25
o
C rating
Cathode>
>
T4-LDS-xxxx, Rev x (10-02-14) ©2013 Microsemi Corporation Page 6 of 6
1N8149US 1N8182US
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to x
symbology.
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BD
0.091
0.103
2.31
2.62
BL
0.168
0.215
4.28
5.47
ECT
0.019
0.028
0.48
0.71
S
0.003
0.08
NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional spot
for cement.
DIM
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94

MX1N8176US

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
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