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SQJ570EP-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQJ570EP
www.vishay.com
Vishay Siliconix
S16-1462-Rev. A, 01-Aug-16
7
Document Number: 76453
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
5
10
15
20
25
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 6 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 5 V
10
100
1000
10000
0
3
6
9
12
15
0246810
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
160
320
480
640
800
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
1st line
2nd line
10
100
1000
10000
0
3
6
9
12
15
0 1.4 2.8 4.2 5.6 7
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 125 °C
T
C
=-55 °C
T
C
= 25 °C
10
100
1000
10000
0.0
0.1
0.2
0.3
0.4
0.5
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
I
D
= 1 A
V
DS
= 50 V
SQJ570EP
www.vishay.com
Vishay Siliconix
S16-1462-Rev. A, 01-Aug-16
8
Document Number: 76453
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
-0.5
-0.2
0.1
0.4
0.7
1.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 µA
10
100
1000
10000
0.0
0.2
0.4
0.6
0.8
1.0
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
10
100
1000
10000
-130
-126
-122
-118
-114
-110
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 6 A
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
C
= 25 °C
Single pulse
BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
I
D
limited
SQJ570EP
www.vishay.com
Vishay Siliconix
S16-1462-Rev. A, 01-Aug-16
9
Document Number: 76453
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76453
.
10
-3
10
-2
1
1
006010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
P
DM
10
100
1000
10000
0.01
0.1
1
11.010.0100.01000.0
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
P1-P3P4-P6P7-P9P10-P10

SQJ570EP-T1_GE3

Mfr. #:
Buy SQJ570EP-T1_GE3
Manufacturer:
Vishay
Description:
MOSFET N/P-CH 100V POWERPAK SO8
Lifecycle:
New from this manufacturer.
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