Data Sheet ADF4157
Rev. D | Page 3 of 24
SPECIFICATIONS
AV
DD
= DV
DD
= 2.7 V to 3.3 V; V
P
= AV
DD
to 5.5 V; AGND = DGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted;
dBm referred to 50 Ω.
Table 1.
Parameter
Unit
Test Conditions/Comments
RF CHARACTERISTICS (3 V)
RF Input Frequency (RF
IN
)
GHz min/max
10 dBm/0 dBm min/max; for lower frequencies, ensure slew rate
(SR) > 400 V/µs
REFERENCE CHARACTERISTICS
REF
IN
Input Frequency 10/300 MHz min/max For f
REFIN
< 10 MHz, ensure slew rate > 50 V/µs
REF
IN
Input Sensitivity
V p-p min/max
For 10 MHz < f
REFIN
< 250 MHz, biased at AV
DD
/2
2
0.7/AV
V p-p min/max
For 250 MHz < f
REFIN
< 300 MHz, biased at AV
DD
/2
2
REF
IN
Input Capacitance
pF max
REF
IN
Input Current
µA max
PHASE DETECTOR
Phase Detector Frequency
3
MHz max
CHARGE PUMP
I
CP
Sink/Source
Programmable
High Value 5 mA typ With R
SET
= 5.1 kΩ
Low Value
µA typ
Absolute Accuracy 2.5 % typ With R
SET
= 5.1 kΩ
R
SET
Range
min/max
I
CP
Three-State Leakage Current
nA typ
Sink and source current
Matching 2 % typ 0.5 V < V
CP
< V
P
0.5
I
CP
vs. V
CP
% typ
0.5 V < V
CP
< V
P
0.5
I
CP
vs. Temperature
% typ
V
CP
= V
P
/2
LOGIC INPUTS
V
INH
, Input High Voltage 1.4 V min
V
INL
, Input Low Voltage
V max
I
INH
/I
INL
, Input Current ±1 µA max
C
IN
, Input Capacitance
pF max
LOGIC OUTPUTS
V
OH
, Output High Voltage
V min
Open-drain 1 kΩ pull-up to 1.8 V
V
OH
, Output High Voltage VDD 0.4 V min CMOS output chosen
V
OL
, Output Low Voltage
V max
I
OL
= 500 µA
POWER SUPPLIES
AV
DD
V min/max
DV
DD
AV
V
P
V min/V max
I
DD
mA max
23 mA typical
Low Power Sleep Mode 10 µA typ
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
(PN
SYNTH
)
4
dBc/Hz typ
PLL loop B/W = 500 kHz;
measured at 100 kHz
Normalized 1/f Noise (PN
1_f
)
5
dBc/Hz typ
10 kHz offset; normalized to 1 GHz
Phase Noise Floor
6
137 dBc/Hz typ @ 10 MHz PFD frequency
dBc/Hz typ
@ 25 MHz PFD frequency
Phase Noise Performance
7
@ VCO output
5800 MHz Output
8
87 dBc/Hz typ @ 2 kHz offset, 25 MHz PFD frequency
1
Operating temperature of B version is 40°C to +85°C.
2
AC-coupling ensures AV
DD
/2 bias.
3
Guaranteed by design. Sample tested to ensure compliance.
4
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log(N) (where N is the N divider
value) and 10 log(F
PFD
). PN
SYNTH
= PN
TOT
− 10 log(F
PFD
) − 20 log(N).
5
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, F
RF
,
and at a frequency offset f is given by PN = PN
1_f
+ 10 log(10 kHz/f) + 20 log(F
RF
/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
6
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value).
7
The phase noise is measured with the EV-ADF4157SD1Z and the Agilent E5052A phase noise system.
8
f
REFIN
= 100 MHz; f
PFD
= 25 MHz; offset frequency = 2 kHz; RF
OUT
= 5800.25 MHz; N = 232; loop bandwidth = 20 kHz.
ADF4157 Data Sheet
Rev. D | Page 4 of 24
TIMING SPECIFICATIONS
AV
DD
= DV
DD
= 2.7 V to 3.3 V; V
P
= AV
DD
to 5.5 V; AGND = DGND = 0 V; T
A
= T
MIN
to T
MAX
, unless otherwise noted;
dBm referred to 50 Ω.
Table 2.
Parameter Limit at T
MIN
to T
MAX
(B Version) Unit Test Conditions/Comments
t
1
20 ns min LE setup time
t
2
10 ns min Data to clock setup time
t
3
10 ns min Data to clock hold time
t
4
25 ns min Clock high duration
t
5
25 ns min Clock low duration
t
6
10 ns min Clock to LE setup time
t
7
20 ns min LE pulse width
CLK
DATA
LE
LE
DB23 (MSB) DB22
DB2
(CONTROL BIT C3)
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
1
t
2
t
3
t
7
t
6
t
4
t
5
05874-002
Figure 2. Timing Diagram
Data Sheet ADF4157
Rev. D | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, GND = AGND = DGND = 0 V, V
DD
= AV
DD
= DV
DD
, unless otherwise noted.
Table 3.
Parameter Rating
AV
DD
/DV
DD
to AGND/DGND 0.3 V to +4 V
AV
DD
to DV
DD
0.3 V to +0.3 V
V
P
to AGND/DGND 0.3 V to +5.8 V
V
P
to AV
DD
/DV
DD
0.3 V to +5.8 V
Digital I/O Voltage to AGND/DGND 0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to AGND/DGND 0.3 V to V
DD
+ 0.3 V
REF
IN
, RF
IN
x to AGND/DGND
0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Industrial (B Version) 40°C to +85°C
Storage Temperature Range 65°C to +125°C
Maximum Junction Temperature 150°C
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θ
JA
Unit
TSSOP 112 °C/W
LFCSP (Paddle Soldered) 30.4 °C/W
ESD CAUTION

ADF4157BRUZ-RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL Hi Resolution 6 GHz Fractional-N Freq
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union