74LVC1G11DW-7

74LVC1G11
Document number: DS35122 Rev. 4 - 2
4 of 12
www.diodes.com
August 2013
© Diodes Incorporated
NEW PRODUCT
74LVC1G11
Electrical Characteristics T
A
= -40°C to +85°C (All typical values are at V
CC
= 3.3V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions
V
CC
Min Typ Max Unit
V
OH
High-Level Output Voltage
I
OH
= -100μA
1.65V to 5.5V
V
CC
– 0.1
V
I
OH
= -4mA
1.65V 1.2
I
OH
= -8mA
2.3V 1.9
I
OH
= -16mA
3V
2.4
I
OH
= -24mA
2.3
I
OH
= -32mA
4.5V 3.8
V
OL
Low-Level Output Voltage
I
OL
= 100μA
1.65V to 5.5V 0.1
V
I
OL
= 4mA
1.65V 0.45
I
OL
= 8mA
2.3V 0.3
I
OL
= 16mA
3V
0.4
I
OL
= 24mA
0.55
I
OL
= 32mA
4.5V 0.55
I
I
Input Current
V
I
= 5.5 V or GND
0 to 5.5V ± 5 μA
I
OFF
Power Down Leakage
Current
V
I
or V
O
= 5.5V
0 ± 10 μA
I
CC
Supply Current
V
I
= 5.5V of GND, I
O
= 0
1.65V to 5.5V 10 μA
ΔI
CC
Additional Supply Current
Input at V
CC
–0.6V
3V to 5.5V 500 μA
Electrical Characteristics T
A
= -40°C to +125°C (All typical values are at V
CC
= 3.3V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions
V
CC
Min Typ Max Unit
V
OH
High-Level Output Voltage
I
OH
= -100μA
1.65V to 5.5V
V
CC
– 0.1
V
I
OH
= -4mA
1.65V 0.95
I
OH
= -8mA
2.3V 1.7
I
OH
= -16mA
3V
1.9
I
OH
= -24mA
2.0
I
OH
= -32mA
4.5V 3.4
V
OL
Low-Level Output Voltage
I
OL
= 100μA
1.65V to 5.5V
0.1
V
I
OL
= 4mA
1.65V
0.70
I
OL
= 8mA
2.3V
0.45
I
OL
= 16mA
3V
0.60
I
OL
= 24mA
0.80
I
OL
= 32mA
4.5V
0.80
I
I
Input Current
V
I
= 5.5 V or GND
0 to 5.5V
± 20 μA
I
OFF
Power Down Leakage
Current
V
I
or V
O
= 5.5V
0
± 20 μA
I
CC
Supply Current
V
I
= 5.5V of GND, I
O
= 0
1.65V to 5.5V
40 μA
ΔI
CC
Additional Supply Current
Input at V
CC
–0.6 V
3V to 5.5V 5000 μA
74LVC1G11
Document number: DS35122 Rev. 4 - 2
5 of 12
www.diodes.com
August 2013
© Diodes Incorporated
NEW PRODUCT
74LVC1G11
Package Characteristics (All typical values are at V
CC
= 3.3V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions
V
CC
Min Typ Max Unit
C
I
Input Capacitance
V
I
= V
CC
– or GND
3.3
3.5
pF
θ
JA
Thermal Resistance Junction-
to-Ambient
SOT26
(Note 6)
204
°C/W
SOT363 371
X2-DFN1410-6 430
X2-DFN1010-6 510
θ
JC
Thermal Resistance Junction-
to-Case
SOT26
(Note 6)
52
°C/W
SOT363 143
X2-DFN1410-6 190
X2-DFN1010-6 250
Note: 6. Test condition for SOT26, SOT363, X2-DFN1410-6 and X2-DFN1010-6 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
Switching Characteristics
T
A
= -40°C to +85°C, C
L
= 15pF (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y
1.0 15.2
0.7 5.6
0.7 4.1
0.7 3.1 ns
T
A
= -40°C to +85°C, C
L
= 30 or 50pF (see Figure 2)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y
1.0 17.2
0.7 6.2
0.7 4.9
0.7 3.5 ns
T
A
= -40°C to +125°C, C
L
= 15 pF (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y
1.0 18.3
0.7 6.7
0.7 4.9
0.7 3.7 ns
T
A
= -40°C to +125°C, C
L
= 30 or 50pF (see Figure 2)
Parameter
From
(Input)
TO
(OUTPUT)
V
CC
= 1.8V
± 0.15V
V
CC
= 2.5V
± 0.2V
V
CC
= 3.3V
± 0.3V
V
CC
= 5V
± 0.5V
Unit
Min Max Min Max Min Max Min Max
t
pd
Any Y
1.0 20.7
0.7 7.5
0.7 5.9
0.7 4.2 ns
74LVC1G11
Document number: DS35122 Rev. 4 - 2
6 of 12
www.diodes.com
August 2013
© Diodes Incorporated
NEW PRODUCT
74LVC1G11
Operating Characteristics (@T
A
= +25°C, unless otherwise specified.)
Parameter
Test
Conditions
V
CC
= 1.8V V
CC
= 2.5V V
CC
= 3.3V V
CC
= 5V
Unit
Typ Typ Typ Typ
C
pd
Power dissipation
capacitance
f = 10 MHz 17 18 19 22 pF
Parameter Measurement Information
V
CC
Inputs
V
M
C
L
R
L
V
I
t
r
/t
f
1.8V±0.15V
V
CC
2ns
V
CC
/2
15pF 1M
2.5V±0.2V
V
CC
2ns
V
CC
/2
15pF 1M
3.3V±0.3V 3V 2.5ns 1.5V 15pF 1M
5V±0.5V
V
CC
2.5ns
V
CC
/2
15pF 1M
Voltage Waveform
Pulse Duration
Voltage Waveform
Propagation Delay Times
Inverting and Non Inverting Outputs
Notes: A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate 10MHz
C. Inputs are measured separately one transition per measurement
D. t
PLH
and t
PHL
are the same as t
PD
Figure 1 Load Circuit and Voltage Waveforms

74LVC1G11DW-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Logic Gates 1.65 to 5.5V VCC 1G Single 3 Input POS
Lifecycle:
New from this manufacturer.
Delivery:
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