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IS61WV102416ALL-20TLI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC TEST LOADS
Figure 1.
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
Figure 2.
Z
O
= 50Ω
1.5V
50Ω
OUTPUT
30 pF
Including
jig and
scope
AC TEST CONDITIONS (HIGH SPEED)
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 5%) (1.65V-2.2V)
InputPulseLevel 0.4VtoVdd-0.3V 0.4V to Vdd-0.3V 0.4V to Vdd-0.2V
InputRiseandFallTimes 1.5ns 1.5ns 1.5ns
InputandOutputTiming Vdd/2 Vdd/2 + 0.05 Vdd/2
andReferenceLevel(VRef)
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-8 -10 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
iCC VddDynamicOperating Vdd = Max., Com. — 110 — 90 — 50 mA
Supply Current iOut = 0 mA, f = fmaX Ind. — 115 — 95 — 60
Vin = 0.4V or Vdd –0.3V Auto. — — — 140 — 100
typ.
(2)
60
iCC1 Operating Vdd = Max., Com. — 85 — 85 — 45 mA
Supply Current iOut = 0 mA, f = 0 Ind. — 90 — 90 — 55
Vin = 0.4V or Vdd –0.3V Auto. — — — 110 — 90
isb1 TTLStandbyCurrent Vdd = Max., Com. — 30 — 30 — 30 mA
(TTLInputs) Vin = ViH or ViL Ind. — 35 — 35 — 35
CE ≥ ViH,f=0 Auto. — — — 70 — 70
isb2 CMOSStandby Vdd = Max., Com. — 20 — 20 — 20 mA
Current(CMOSInputs) CE ≥ Vdd – 0.2V, Ind. — 25 — 25 — 25
Vin ≥ Vdd – 0.2V, or Auto. — — — 60 — 60
Vin ≤ 0.2V
, f = 0 typ.
(2)
4
Note:
1. At f = f
maX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.0V,Ta = 25
o
C and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 9
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(OverOperatingRange)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
trC ReadCycleTime 8 — 10 — ns
taa AddressAccessTime — 8 — 10 ns
tOHa OutputHoldTime 2.5 — 2.5 — ns
taCe CEAccessTime — 8 — 10 ns
tdOe OEAccessTime — 5.5 — 6.5 ns
tHzOe
(2)
OEtoHigh-ZOutput — 3 — 4 ns
tLzOe
(2)
OEtoLow-ZOutput 0 — 0 — ns
tHzCe
(2
CEtoHigh-ZOutput 0 3 0 4 ns
tLzCe
(2)
CEtoLow-ZOutput 3 — 3 — ns
tba LB, UBAccessTime — 5.5 — 6.5 ns
tHzb
(2)
LB, UBtoHigh-ZOutput 0 3 0 3 ns
tLzb
(2)
LB, UBtoLow-ZOutput 0 — 0 — ns
tPu PowerUpTime 0 — 0 — ns
tPd PowerDownTime — 8 — 10 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

IS61WV102416ALL-20TLI-TR

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ISSI
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SRAM 16Mb, 1Mbx16, 20ns Async SRAM
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