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IS61WV102416BLL-10MLI-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(OverOperatingRange)
-20 ns
Symbol Parameter Min. Max. Unit
trC ReadCycleTime 20 — ns
taa AddressAccessTime — 20 ns
tOHa OutputHoldTime 2.5 — ns
taCe CEAccessTime — 20 ns
tdOe OEAccessTime — 8 ns
tHzOe
(2)
OEtoHigh-ZOutput 0 8 ns
tLzOe
(2)
OEtoLow-ZOutput 0 — ns
tHzCe
(2
CEtoHigh-ZOutput 0 8 ns
tLzCe
(2)
CEtoLow-ZOutput 3 — ns
tba LB, UBAccessTime — 8 ns
tHzb LB, UBtoHigh-ZOutput 0 8 ns
tLzb LB, UBtoLow-ZOutput 0 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto
V
dd-0.3VandoutputloadingspeciedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE NO. 2
(1,3)
(CE and OE Controlled)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CE =
ViL.
3. Address is valid prior to or coincident with CELOWtransitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CE = OE = ViL)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
DOUT
ADDRESS
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
06/02/2014
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(OverOperatingRange)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
twC WriteCycleTime 8 — 10 — ns
tsCe CEtoWriteEnd 6.5 — 8 — ns
taw AddressSetupTime 6.5 — 8 — ns
toWriteEnd
tHa AddressHoldfromWriteEnd 0 — 0 — ns
tsa AddressSetupTime 0 — 0 — ns
tPwb LB, UBValidtoEndofWrite 6.5 — 8 — ns
tPwe1 WE Pulse Width 6.5 — 8 — ns
tPwe2 WE Pulse Width (OE=LOW) 8.0 — 10 — ns
tsd DataSetuptoWriteEnd 5 — 6 — ns
tHd DataHoldfromWriteEnd 0 — 0 — ns
tHzwe
(2)
WELOWtoHigh-ZOutput — 3.5 — 5 ns
tLzwe
(2)
WEHIGHtoLow-ZOutput 2 — 2 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0Vand
outputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. TheinternalwritetimeisdenedbytheoverlapofCELOWandUBorLB,andWELOW.Allsignalsmustbeinvalidstatestoiniti-
ateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherising
or falling edge of the signal that terminates the write. Shaded area product in development
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

IS61WV102416BLL-10MLI-TR

Mfr. #:
Buy IS61WV102416BLL-10MLI-TR
Manufacturer:
ISSI
Description:
SRAM 16Mb 10ns 1Mx16 Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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