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MMBD2837LT1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1 Publication Order Number:
MMBD2837LT1/D
MMBD2837LT1G,
MMBD2838LT1G,
SMMBD2837LT1G
Monolithic Dual Switching
Diodes
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Peak Reverse Voltage V
RM
75 Vdc
D.C. Reverse Voltage
MMBD2837LT1G, SMMBD2837LT1G
MMBD2838LT1G
V
R
30
50
Vdc
Peak Forward Current I
FM
450
300
mAdc
Average Rectified Current I
O
150
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417
°C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23 (TO−236AB)
CASE 318
STYLE 9
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
2
ANODE
ANODE
1
xxx = Specific Device Code
A5 = MMBD2837LT1G,
SMMBD2837LT1G
MA6 = MMBD2838LT1G
M = Date Code*
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
MMBD2837LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBD2838LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
1
xxx M G
G
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SMMBD2837LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 mAdc)
MMBD2837LT1G, SMMBD2837LT1G
MMBD2838LT1G
V
(BR)
35
75
−
−
Vdc
Reverse Voltage Leakage Current (Note 3.)
(V
R
= 30 Vdc)
MMBD2837LT1G, SMMBD2837LT1G
(V
R
= 50 Vdc)
MMBD2838LT1G
I
R
−
−
0.1
0.1
mAdc
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz) C
T
− 4.0 pF
Forward Voltage
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
V
F
−
−
−
1.0
1.0
1.2
Vdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1) t
rr
− 4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while the second diode is unbiased.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G
www.onsemi.com
3
CURVES APPLICABLE TO EACH CATHODE
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
, FORWARD CURRENT (mA)
F
T
A
= 85°C
T
A
= -40°C
T
A
= 25°C
, REVERSE CURRENT ( A)
R
m
T
A
= 25°C
T
A
= 55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
1.0
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
C
D
, DIODE CAPACITANCE (pF)
2468
P1-P3P4-P4

MMBD2837LT1

Mfr. #:
Buy MMBD2837LT1
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 75V 150mA
Lifecycle:
New from this manufacturer.
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