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MDD255-18N1

P1-P3
© 2004 IXYS All rights reserved
1 - 3
MDD 255
423
IXYS reserves the right to change limits, test conditions and dimensions.
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
1300 1200 MDD 255-12N1
1500 1400 MDD 255-14N1
1700 1600 MDD 255-16N1
1900 1800 MDD 255-18N1
2100 2000 MDD 255-20N1
2300 2200 MDD 255-22N1
I
FRMS
= 2x450 A
I
FAVM
= 2x270 A
V
RRM
= 1200-2200 V
Features
• International standard package
• Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
I
FRMS
T
VJ
= T
VJM
450 A
I
FAVM
T
C
= 100°C; 180° sine 270 A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz) 9500 A
V
R
= 0 t = 8.3 ms (60 Hz) 10200 A
T
VJ
= T
VJM
t = 10 ms (50 Hz) 8400 A
V
R
= 0 t = 8.3 ms (60 Hz) 9000 A
∫∫
∫∫
∫i
2
dt T
VJ
= 45°C t = 10 ms (50 Hz) 451 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) 437 000 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz) 353 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) 340 000 A
2
s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
≤ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
Symbol Conditions Characteristic Values
I
RRM
T
VJ
= T
VJM
; V
R
= V
RRM
30 mA
V
F
I
F
= 600 A; T
VJ
= 25°C 1.4 V
V
T0
For power-loss calculations only 0.8 V
r
T
T
VJ
= T
VJM
0.6 mΩ
R
thJC
per diode; DC current 0.140 K/W
per module other values 0.07 K/W
R
thJK
per diode; DC current see MCC 255 0.18 K/W
per module 0.09 K/W
Q
S
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs 700 µC
I
RM
260 A
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
High Power
Diode Modules
1
2
3
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
31 2
© 2004 IXYS All rights reserved
2 - 3
MDD 255
423
IXYS reserves the right to change limits, test conditions and dimensions.
0 25 50 75 100 125 150
0 100 200 300 400
0
100
200
300
400
500
0 25 50 75 100 125 150
110
10
5
10
6
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 100 200 300 400 500
0
250
500
750
1000
1250
1500
I
2
t
I
FAVM
I
dAVM
A
P
tot
W
T
A
T
C
s
t
ms
t
A
2
s
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
FSM
A
A
I
FAVM
W
P
tot
T
A
R
L
50 1500 100 200
100
300
500
0
200
400
600
50 1500 100 200
0
5
10
15
20
25
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
50 Hz
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 150°C
180° sin
120°
60°
30°
DC
A
180° sin
120°
60°
30°
DC
0.8
1.2
0.2
0.3
0.4
0.6
R
thKA
K/W
0.1
2 x MDD255
Circuit
B2U
0.15
0.08
0.06
R
thKA
K/W
0.5
0.1
0.2
0.3
T
VJ
= 125°C
V
R
= 600 V
T
VJ
= 125°C
V
R
= 600 V
I
F
= 400 A
I
F
= 400 A
I
RM
di
F
/dt
A/µs
A
t
rr
di
F
/dt
A/µs
µs
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
Fig. 6 Single phase rectifier bridge:Power dissipation vs. direct output current and
ambient temperature R = resistive load, L = inductive load
Fig. 5 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 7 Typ. recovery time t
rr
versus -di
F
/dt
© 2004 IXYS All rights reserved
3 - 3
MDD 255
423
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per diode)
Fig. 10Transient thermal impedance junction to heatsink (per diode)
t
Z
thJK
s
t
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
K/W
Z
thJC
I
dAVM
P
tot
0 25 50 75 100 125 1500 200 400 600 800
0
500
1000
1500
2000
2500
A
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
°C
T
A
W
K/W
s
3 x MDD255
Circuit
B6U
0.3
0.2
0.15
0.1
0.06
0.03
0.4
R
thKA
K/W
DC
180°
120°
60°
30°
DC
30°
60°
120°
180°
R
thJC
for various conduction angles d:
d R
thJC
(K/W)
DC 0.139
180° 0.148
120° 0.156
60° 0.176
30° 0.214
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.0066 0.00054
2 0.0358 0.098
3 0.0831 0.54
4 0.0129 12
R
thJK
for various conduction angles d:
d R
thJK
(K/W)
DC 0.179
180° 0.188
120° 0.196
60° 0.216
30° 0.254
Constants for Z
thJK
calculation:
iR
thi
(K/W) t
i
(s)
1 0.0066 0.00054
2 0.0358 0.098
3 0.0831 0.54
4 0.0129 12
5 0.04 12
P1-P3

MDD255-18N1

Mfr. #:
Buy MDD255-18N1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 255 Amps 1800V
Lifecycle:
New from this manufacturer.
Delivery:
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