29
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
Ratings
–140
–140
–6
–10
–4
100(Tc=25°C)
150
–55
to
+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
–10
max
–10max
–140min
50min∗
–0.5max
20typ
400typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=–140V
V
EB=–6V
I
C=–50mA
V
CE=–4V, IC=–3A
I
C=–5A, IB=–0.5A
V
CE=–12V, IE=0.5A
V
CB=–10V, f=1MHz
2SA1695
(Ta=25°C) (Ta=25°C)
IC
–
VCE Characteristics
(Typical)
hFE
–
IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE
–
IC
Temperature Characteristics (Typical)
IC
–
VBE Temperature Characteristics
(Typical)
VCE(sat)
–
IB Characteristics
(Typical)
Pc
–
Ta Derating
0
0
–2
–4
–6
–8
–10
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–400mA
–25mA
I
B
=–10mA
–300mA
–200mA
–150mA
–100mA
–75mA
–50mA
0
–3
–2
–1
0 –2.0–0.5 –1.5–1.0
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
0
–10
–8
–2
–6
–4
0 –1.5–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.02 –0.1 –1 –5–0.5 –10
30
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–10–5–3 –100 –200–50
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
3ms
10ms
0.02 0.1 1 10
0
10
30
20
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
fT
–
IE Characteristics
(Typical)
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10
30
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
θj-a
–
t Characteristics
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
