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Table 2. PIN FUNCTION DESCRIPTION (14 LEAD SON Package)
Pin #
Label Pin Description
1 ANODE Anode input for LED fault detection
2 VBIAS Bias output for ballast transistor
3 VBB VBB (14 V) Supply Voltage
4 LIN LIN−bus connection
5 GND Supply GND
6 TST2 Test pin (ground pin)
7 GND Supply GND
8 LED3R Current program resistor to ground for LED3C
9 LED1R Current program resistor to ground for LED1C
10 LED2R Current program resistor to ground for LED2C
11 TST1 Test pin (float pin) (Note 1)
12 LED2C Channel 2 regulated current output to LED cathode
13 LED1C Channel 1 regulated current output to LED cathode
14 LED3C Channel 3 regulated current output to LED cathode
1. Floating pin 11 eliminates the possibility of a short to ground of the adjacent pin (LED2C).
Table 3. MAXIMUM RATINGS
Parameter Min Max Unit
V
BB
Supply voltage −0.3 +43 (Note 2) V
Supply voltage −0.3 28 (Note 3) V
Vlin Bus input voltage (LIN) −45 +45 V
VVBIAS Ballast Transistor Drive Voltage Pin (VBIAS) −0.3 VANODE V
IBIAS Ballast Output Drive (VBIAS) 10 mA
VANODE LED Fault Sense Pin (ANODE) voltage −0.3 VBB V
VLEDC LED Current Pin (LEDxC) voltage (Note 7) −0.3 VBB V
VLEDR Program Current Pin (LEDxR) voltage (Note 4) −0.3 3.6 V
T
J
Junction temperature range (Note 5) −50 +175 °C
Tflw Peak Reflow Soldering Temperature: Pb−Free
60 to 150 seconds at 217°C (Note 6)
260 peak
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. For limited time: t < 0.5 s.
3. t < 3 minutes
4. VLEDR cannot exceed VLEDC.
5. The circuit functionality is not fully guaranteed outside operating temperature range.
6. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D,
and Application Note AND8003/D.
7. Capacitive loading on LEDxC pins is limited to < 200 pF for proper functionality.
Table 4. ATTRIBUTES
Characteristics Value
ESD Capability Human Body Model (LIN Pin)
(Note 8) Human Body Model (All Remaining Pins)
Machine Model
> ± 4 kV
> ± 2 kV
> ± 200 V
Moisture Sensitivity Level (Note 6) MSL 2
Storage Temperature −55°C to 150°C
Package Thermal Resistance
Junction−to−Ambient (R
q
JA
) (2S2P) (Note 9)
Junction−to−Pin (R
y
JL
) (Pins 4 & 11)
100°K/W
53°K/W
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
8. HBM according to AEC−Q100: EIA−JESD22−A114−B (100 pF via 1.5 kW) and MM according to AEC−Q100: EIA−JESD22−A115−A.
9. Simulated conform JEDEC JESD51
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Table 5. ELECTRICAL CHARACTERISTICS (5.5 V < V
BB
< 18 V, −40°C < T
J
< 125°C, R
sense
= 10 W TWPROG = TWPROG2 =
0, unless otherwise specified).
Symbol
Pin(s) Characteristic Conditions Min Typ Max Unit
LEDDRIVER
I
LEDmax
LED1C
LED2C
LED3C
Single LED current in nor-
mal operation
V
BB
= 14 V
For individual LED driven
32 mA
I
LEDmaxTotal
All LED currents in normal
operation
V
BB
= 14 V
For all LEDs driven
96 mA
I
LEDxC
LED current Uncalibrated Max ON Duty
Cycle
R
SENSE
= 10 W
R
SENSE
= 100 W
28
2.8
30.5
3.05
32
3.2
mA
I
MSabs
Absolute error on LED
current
Calibrated
V
BB
= 14 V,
3 mA < I
LEDxC
< 30 mA
R
SENSE
= 10 W
R
SENSE
= 100 W
−1
−3
1
3
%
V
Vref1
Reference voltage for cur-
rent regulators (High)
state
V
BB
= 14 V 325
mV
V
Vref2
Reference voltage for cur-
rent regulators (Low) state
V
BB
= 14 V 20
mV
LIN TRANSMITTER
I
bus_off
LIN
Dominant state, driver off V
linbus
= 0 V,
V
BB
= 8 V & 18 V
−1 mA
I
bus_off
Recessive state, driver off V
linbus
= V
bat
,
V
BB
= 8 V & 18 V
20
mA
I
bus_lim
Current limitation V
BB
= 8 V & 18 V 40 75 200 mA
R
slave
Pullup resistance V
BB
= 8 V & 18 V 20 30 47
kW
LIN RECEIVER
V
bus_dom
LIN
Receiver dominant state V
BB
= 8 V & 18 V 0 0.4 * V
BB
V
V
bus_rec
Receiver recessive state V
BB
= 8 V & 18 V 0.6 * V
BB
V
BB
V
V
bus_hys
Receiver hysteresis V
BB
= 8 V & 18 V 0.05 * V
BB
0.175 * V
BB
V
Vrec_th_wake Lin wake up threshold V
BB
= 8 V & 18 V V
BB
− 1.1 V
BB
− 3.3 V
THERMAL WARNING & SHUTDOWN
T
tw
Thermal warning
(Notes 10, 11)
107 115 123 °C
T
twhyst
Thermal warning hyster-
esis
10
T
tsd
Thermal shutdown
(Note 10)
147 155 163 °C
THERMAL CONTROL
TH_Ired_step
LED Drive Current change
at Thermal Warning
−6.25
%
per
step
VBIAS OUTPUT
V
bias
Output voltage
V
BB
= 14 V, I
bias
= 5 mA 7.3 8.3 V
VBB SUPPLY
VBB_UV
VBB Under Voltage
for LIN Communication
5.40 5.8 6.0 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
10.Parameter guaranteed by trimming in production test.
11. No more than 2000 cumulative hours in life time above Tw.
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Table 5. ELECTRICAL CHARACTERISTICS (5.5 V < V
BB
< 18 V, −40°C < T
J
< 125°C, R
sense
= 10 W TWPROG = TWPROG2 =
0, unless otherwise specified).
Symbol UnitMaxTypMinConditionsCharacteristicPin(s)
VBB SUPPLY
VBB_UV_hys
VBB Under Voltage Hys-
teresis for LIN Communic-
ation
0.2 0.4 V
PORH_V
bb
Power on Reset for output
drive capability
Rising V
bb
4.4
V
Falling V
bb
1.9
V
bbOTP
V
BB
Supply voltage for OTP
zapping
13 16 V
I
bat
Total current consumption Unloaded outputs
V
BB
= 18 V, LEDs OFF
5.0 7.0 mA
I
bat_sleep
Sleep mode current con-
sumption
V
BB
= 13.5 V, T
J
= 85°C
10 20
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
10.Parameter guaranteed by trimming in production test.
11. No more than 2000 cumulative hours in life time above Tw.

NCV74300V3GEVK

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LED Lighting Development Tools LIN RGB HIGH CURRENT EVB
Lifecycle:
New from this manufacturer.
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