VS-VSKU162...PbF, VS-VSKV162...PbF Series
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Vishay Semiconductors
Revision: 27-Jul-2018
4
Document Number: 95901
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0306090120150180
30
60
90
120
180
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
R (D C) = 0.16 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100150200250300
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
R (DC) = 0.16 K/W
thJC
0
50
100
150
200
250
300
350
400
0 20406080100120140160180
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Per Junction
T = 1 25°C
J
180
120
90
60
30
0
50
100
150
200
250
300
350
400
0 306090120150180210240270
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
Per Junction
T = 125°C
J
1500
2000
2500
3000
3500
4000
4500
001011
Num ber O f Eq ua l Am plitud e Ha lf Cycle C urrent Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In itia l T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Per Junction
J
1500
2000
2500
3000
3500
4000
4500
5000
11.010.0
Peak Half Sine W ave O n-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
Per Junction
In itia l T = 125°C
No Voltage Reapplied
Rated V Reap plied
RRM
Versus Pulse Train Duration. Control
J
