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BDW94CFP

P1-P3P4-P4
BDW93CFP
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
■ MONOLITHIC DARLINGTON
CONFIGURATION
■ COMPLEMENTARY PNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ FULLY MOLDED INSULATED PACKAGE
■ 2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-220FP fully molded insulated
package. It is intented for use in power linear
and switching applications.
The complementary PNP type is the BDW94CFP.
INTERNAL SCHEMATIC DIAGRAM
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW94CFP
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.2 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
33 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 10 KΩ R
2
Typ. = 150 Ω
1
2
3
T0-220FP
®
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
V
CB
= 100 V T
case
= 150
o
C
100
5
µA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V 1 mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2mA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA 100 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 20 mA
I
C
= 10 A I
B
= 100 mA
2
3
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 20 mA
I
C
= 10 A I
B
= 100 mA
2.5
4
V
V
h
FE
∗ DC Current Gain I
C
= 3 A V
CE
= 3 V
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
1000
750
100
20000
V
F
* Parallel-diode Forward
Voltage
I
F
= 5 A
I
F
= 10 A
1.3
1.8
2
4
V
V
h
fe
Small Signal Current
Gain
I
C
= 1 A V
CE
= 10 V
f = 1 MHz 20
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDW93CFP / BDW94CFP
2/4
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BDW93CFP / BDW94CFP
3/4
P1-P3P4-P4

BDW94CFP

Mfr. #:
Buy BDW94CFP
Manufacturer:
STMicroelectronics
Description:
Darlington Transistors PNP Power Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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