Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3508M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10586EJ02V0DS (2nd edition)
Date Published October 2008 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
• Super low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3508M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
