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IXFH13N50

P1-P3P4-P4
1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C13A
I
DM
T
C
= 25°C, pulse width limited by T
JM
52 A
I
AR
T
C
= 25°C13A
E
AR
T
C
= 25°C18mJ
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 200 mA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
0.4 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
●
International standard packages
●
Low R
DS (on)
HDMOS
TM
process
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic Rectifier
Applications
●
DC-DC converters
●
Uninterruptible Power Supplies (UPS)
●
Battery chargers
●
Switched-mode and resonant-mode
power supplies
●
DC choppers
●
Temperature and lighting controls
●
Low voltage relays
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
●
Space savings
●
High power density
D
G
HiPerFET
TM
IXFH 13 N50 V
DSS
= 500 V
Power MOSFETs IXFM 13 N50 I
D (cont)
= 13 A
R
DS(on)
= 0.4 W
t
rr
£ 250 ns
91524D (10/95)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 7.5 9.0 S
C
iss
2800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 300 pF
C
rss
70 pF
t
d(on)
18 30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
,2740ns
t
d(off)
I
D
= 0.5 • I
D25
, R
G
= 4.7 W (External) 76 100 ns
t
f
32 60 ns
Q
g(on)
110 120 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
15 25 nC
Q
gd
40 50 nC
R
thJC
0.7 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 13 A
I
SM
Repetitive; pulse width limited by T
JM
52 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
T
J
=25°C 250 ns
T
J
= 125°C 350 ns
Q
RM
T
J
=25°C 0.6 mC
T
J
= 125°C 1.25 mC
I
RM
T
J
=25°C9A
T
J
= 125°C15A
I
F
= I
S
-di/dt = 100 A/ms,
V
R
= 100 V
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AA (IXFM) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B 19.43 19.94 - 0.785
C 6.40 9.14 0.252 0.360
D 0.97 1.09 0.038 0.043
E 1.53 2.92 0.060 0.115
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 25.90 0.991 1.020
IXFH 13N50
IXFH 13N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXFH 13N50
IXFH 13N50
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0.0
2.5
5.0
7.5
10.0
12.5
15.0
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0 5 10 15 20 25
R
DS(on)
- Normalized
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
GS
= 10V
T
J
= 25°C
V
GS
- Volts
012345678910
I
D
- Amperes
0
5
10
15
20
25
T
J
= 25°C
V
DS
- Volts
0 5 10 15 20
I
D
- Amperes
0
5
10
15
20
25
6V
5V
7V
8V
V
GS(th)
13N50
I
D
= 6A
V
GS
= 15V
V
GS
=10V
T
J
= 25°C
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
P1-P3P4-P4

IXFH13N50

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Description:
MOSFET N-CH 500V 13A TO-247AD
Lifecycle:
New from this manufacturer.
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