IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA110N055T7
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1 38 65 S
C
iss
3080 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 560 pF
C
rss
140 pF
t
d(on)
Resistive Switching Times 20 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 30 ns
t
d(off)
R
G
= 5 Ω (External) 40 ns
t
f
24 ns
Q
g(on)
67 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 17.5 nC
Q
gd
15 nC
R
thJC
0.65°C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25° C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 110 A
I
SM
Pulse width limited by T
JM
300 A
V
SD
I
F
= 25 A A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/µs70ns
V
R
= 25 V, V
GS
= 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA...7) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537