NB3L553
www.onsemi.com
5
Table 6. AC CHARACTERISTICS; V
DD
= 2.5 V +5% (V
DD
= 2.375 V to 2.625 V, GND = 0 V, T
A
= −40°C to +85°C) (Note 3)
Symbol
Characteristic Min Typ Max Unit
f
in
Input Frequency − − 200 MHz
t
r
/t
f
Output rise and fall times; 0.8 V to 2.0 V − 1.0 1.5 ns
t
pd
Propagation Delay, CLK to Q
n
(Note 4) 2.2 3.0 5.0 ns
t
skew
Output−to−output skew; (Note 5) − 35 50 ps
t
skew
Device−to−device skew, (Note 5) − − 500 ps
AC CHARACTERISTICS; V
DD
= 3.3 V +5% (V
DD
= 3.15 V to 3.45 V, GND = 0 V, T
A
= −40°C to +85°C) (Note 3)
Symbol
Characteristic Conditions Min Typ Max Unit
f
in
Input Frequency − − 200 MHz
t
jitter
(f)
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
f
carrier
= 100 MHz − 18 − fs
t
r
/t
f
Output rise and fall times; 0.8 V to 2.0 V − 0.6 1.0 ns
t
pd
Propagation Delay, CLK to Q
n
(Note 4) 2.0 2.4 4.0 ns
t
skew
Output−to−output skew; (Note 5) − 35 50 ps
t
skew
Device−to−device skew, (Note 5) − − 500 ps
AC CHARACTERISTICS; V
DD
= 5.0 V +5% (V
DD
= 4.75 V to 5.25 V, GND = 0 V, T
A
= −40°C to +85°C) (Note 3)
Symbol
Characteristic Min Min Typ Max Unit
f
in
Input Frequency − − 200 MHz
t
jitter
(f)
RMS Phase Jitter (Integrated 12 kHz −
20 MHz) (See Figures 2 and 3)
f
carrier
= 100 MHz − 29 − fs
t
r
/t
f
Output rise and fall times; 0.8 V to 2.0 V − 0.3 0.7 ns
t
pd
Propagation Delay, CLK to Q
n
(Note 4) 1.7 2.5 4.0 ns
t
skew
Output−to−output skew; (Note 5) − 35 50 ps
t
skew
Device−to−device skew, (Note 5) − − 500 ps
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Outputs loaded with external R
L
= 33 W series resistor and C
L
= 15 pF to GND. Duty cycle out = duty in. A 0.01 mF decoupling capacitor should
be connected between V
DD
and GND.
4. Measured with rail−to−rail input clock
5. Measured on rising edges at V
DD
÷ 2 between any two outputs with equal loading.
