POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
14.4
11.6
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
19.2
15.4
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
90 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
3 A
Avalanche Current, L = 0.1mH
I
AS
38 A
Avalanche Energy, L = 0.1mH
E
AS
75 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.0 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
119
°C/W
t<10s 66
Total Power Dissipation (Note 6)
P
D
2.3 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
53
°C/W
t<10s 30
Thermal Resistance, Junction to Case (Note 6)
R
JC
6.1
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
40 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
th
1 — 3 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
— 5.5 7.5
m
V
GS
= 10V, I
D
= 10A
— 7 10
V
GS
= 4.5V, I
D
= 8A
— — 20
V
GS
= 3.3V, I
D
= 6A
Diode Forward Voltage
V
SD
— 0.7 1.1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
3537
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
257
—
pF
Reverse Transfer Capacitance
C
rss
—
215
—
pF
Gate Resistance
R
— 0.9 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
— 34 —
nC
V
DS
= 20V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
— 74 —
nC
Gate-Source Charge
Q
s
— 10.2 —
nC
Gate-Drain Charge
Q
d
— 12.5 —
nC
Turn-On Delay Time
t
D
on
—
8.2
— ns
V
GS
= 10V, V
DS
= 20V,
R
G
= 6, I
D
= 10A
Turn-On Rise Time
t
—
14.1
— ns
Turn-Off Delay Time
t
D
off
—
69.7
— ns
Turn-Off Fall Time
t
f
—
24.4
— ns
Body Diode Reverse Recovery Time
t
r
—
18.5 —
nS
I
F
= 10A, di/dt = 100A/s
Body Diode Reverse Recovery Charge
Q
r
—
12.0 —
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
