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VS-25TTS12SLHM3

P1-P3P4-P6P7-P8
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
4
Document Number: 96123
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half S
ine Wave On-state Current (A)
Initial T = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
At any rated load condition and with
rated V
RRM
applied following surge.
100
150
200
250
300
350
400
0.01 0.1 1
Peak Half S
ine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non repetitive surge current
vs. pulse train duration.
Control of conduction may not be maintained.
Initial T = 125 °C
No voltage reapplied
Rated V
RRM
reapplied
J
1
10
100
1000
012345
T = 25 °C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125 °C
J
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Impedance Z (°C/W)
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
5
Document Number: 96123
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-25TTS12SLHM3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96317
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 25 °C
T
J = 125 °C
b)Rec ommended loa d line for
Frequency limited by PG(AV)
a)Recommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t
p
= 1 ms
(2) PGM = 20 W, t
p
= 2 ms
(3) PGM = 8 W, t
p
= 5 ms
(4) PGM = 4 W, t
p
= 10 ms
12 = 1200 V
1
- Vishay Semiconductors product
2
- Current rating (25 = 25 A)
3 - Circuit configuration:
4 - Package:
5
6
- Voltage rating: voltage code x 100 = V
RRM
T = single thyristor
- Type of silicon:
S = standard recovery rectifier
9
7
Device code
51
32 4
6 7 8 10
VS- 25 T T S 12 S L M3
9
H
T = D
2
PAK (TO-263AB)
- H = AEC-Q101 qualified
- S = surface mountable
10
- M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
- L = tape and reel (left oriented), for different orientation contact factory8
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-15
1
Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D
2
PAK
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC
®
outline TO-263AB
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
M
M
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
P1-P3P4-P6P7-P8

VS-25TTS12SLHM3

Mfr. #:
Buy VS-25TTS12SLHM3
Manufacturer:
Vishay Semiconductors
Description:
SCRs 16A If; 1200V Vr TO-263AB (D2PAK)
Lifecycle:
New from this manufacturer.
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