Nexperia
NX6020CAKS
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET
NX6020CAKS All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2018. All rights reserved
Product data sheet 18 January 2018 3 / 22
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (N-channel)
V
DS
drain-source voltage - 60 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= 10 V; T
amb
= 25 °C [1] - 170 mAI
D
drain current
V
GS
= 10 V; T
amb
= 100 °C [1] - 100 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 680 mA
[2] - 220 mWT
amb
= 25 °C
[1] - 255 mW
P
tot
total power dissipation
T
sp
= 25 °C - 1.06 W
TR2 (P-channel)
V
DS
drain-source voltage - -50 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= -10 V; T
amb
= 25 °C [1] - -160 mAI
D
drain current
V
GS
= -10 V; T
amb
= 100 °C [1] - -100 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -640 mA
[2] - 280 mWT
amb
= 25 °C
[1] - 320 mW
P
tot
total power dissipation
T
sp
= 25 °C - 990 mW
Per device
P
tot
total power dissipation T
amb
= 25 °C [2] - 330 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
TR1 (N-channel), Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 170 mA
TR2 (P-channel), Source-drain diode
I
S
source current T
amb
= 25 °C [1] - -160 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
