2SD2673TL

2SD2673
Transistors
Rev.D 1/2
Low frequency amplifier
2SD2673
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large. (3A)
2) V
CE(sat)
: max. 250mV
At I
C
= 1.5A / I
B
= 30mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
TSMT3
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(
2
)
(
1
)
(
3
)
2.9
2.8
1.9
1.6
0.950.95
0.4
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
3
500
150
55 to +150
6
1
2
Unit
V
V
V
A
A
mW
1W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse, P
W
=1ms
2 Mounted on a 25
×
25
×
0.8mm Ceramic substrate
t
zPackaging specifications
2SD2673
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
CB
=10V, I
E
=0A, f=1MHz
f
T
200
MHz
V
CE
=2V, I
E
=−200mA, f=100MHz
BV
CBO
30
−−
V
I
C
=10µA
BV
CEO
30
−−
V
I
C
=1mA
BV
EBO
6
−−
V
I
E
=10µA
I
CBO
−−
100
nA V
CB
=30V
I
EBO
−−
100
nA V
EB
=6V
V
CE(sat)
120
250 mV
I
C
=1.5A, I
B
=30mA
h
FE
270 680
V
CE
=2V, I
C
=200mA
Cob 40
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
2SD2673
Transistors
Rev.D 2/2
zElectrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.1 DC current gain
vs. collector current
0.001 0.01 0.1 1 1
0
10
1000
100
VCE=−2V
Pulsed
Ta=125°C
Ta=−40°C
Ta=25°C
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V
)
Fig.2 Collector-emitter saturation voltag
e
base-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
C
(A)
0.01
0.001
1
0.1
0.001 0.01 0.1 1
0
1
Ta=25°C
Ta=125°C
I
C
/I
B
=20/1
Pulsed
Ta=−40°C
COLLECTOR CURRENT : I
C
(A)
0.001 0.01 0.1 1 1
0
10
1000
100
I
C
/I
B
=20/1
Pulsed
Ta=125°C
Ta=−40°C
Ta=25°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
Fig.3 Collector-emitter saturation voltag
e
vs. collector current
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.4 Grounded emitter propagatio
n
characteristics
011
0
0.001
0.01
1
10
0.1
V
BE
=2V
Pulsed
Ta=125°C
Ta=25°C
Ta=−40°C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Gain bandwidth product
vs. emitter current
0.01 0.1 1 1
0
1
10
100
Ta=25°C
V
CE
=2V
f=100MHz
)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01 0.1 1 1
0
10
1000
100
Cib
Cob
f
=
1MHz
I
C
=
0A
Ta
=
25
°C
EMITTER TO BASE VOLTAGE : V
EB
(
V)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V
)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching time
0.01 0.1 1 1
0
10
10000
1000
100
tstg
tdon
tr
tf
I
C
/I
B
=20/1
Pulsed
V
CE
=−12V
Ta=25
°C
SWITCHING TIME : (ns)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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About Export Control Order in Japan
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2SD2673TL

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 30V 3A
Lifecycle:
New from this manufacturer.
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