VS-UFB60FA40P

Document Number: 94521 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Insulated Ultrafast Rectifier Module, 60 A
UFB60FA40P
Vishay Semiconductors
Not Available for New Designs, Use VS-UFB80FA40
FEATURES
Two fully independent diodes
Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
Ultrafast reverse recovery
Ultrasoft reverse recovery current shape
Low forward voltage
Optimized for power conversion: welding and industrial
SMPS applications
Industry standard outline
Plug-in compatible with other SOT-227 packages
Easy to assemble
Direct mounting to heatsink
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The UFB60FA40P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
PRODUCT SUMMARY
V
R
400 V
I
F(AV)
at T
C
= 90 °C 60 A
t
rr
46 ns
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current per diode I
F
T
C
= 90 °C 30
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 250
Maximum power dissipation per module P
D
T
C
= 90 °C 64 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage temperatures T
J
, T
Stg
- 55 to 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94521
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
UFB60FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 60 A
Not Available for New Designs, Use VS-UFB80FA40
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 30 A - 1.13 1.39
I
F
= 30 A, T
J
= 150 °C - 0.93 1.07
Reverse leakage current I
RM
V
R
= V
R
rated - - 100 μA
T
J
= 150 °C, V
R
= V
R
rated - - 1.0 mA
Junction capacitance C
T
V
R
= 400 V - 68 - pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 32 46
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-67-
T
J
= 125 °C - 120 -
Peak recovery current I
RRM
T
J
= 25 °C - 6.8 -
A
T
J
= 125 °C - 15 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 228 -
nC
T
J
= 125 °C - 900 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case,
single leg conducting
R
thJC
--1.9°C/W
Junction to case,
both leg conducting
- - 0.95
K/W
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
Document Number: 94521 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
UFB60FA40P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay Semiconductors
Not Available for New Designs, Use VS-UFB80FA40
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
1
10
100
1000
0 0.5 1 1.5 2
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Reverse Voltage - V
R
(V)
Reverse Current - I
R
(µA)
0.001
0.01
0.1
1
10
100
0 100 200 300 400
125˚C
25˚C
Tj = 150˚C
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
( p F )
10
100
1000
1 10 100 1000
T = 25˚C
J
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Single Pulse
(Thermal Impedance)
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc

VS-UFB60FA40P

Mfr. #:
Manufacturer:
Vishay
Description:
DIODE GEN PURP 400V 30A SOT227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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