BUT70W

BUT70W

HIGH POWER NPN TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

■

HIGH CURRENT CAPABILITY

■

FAST SWITCHING SPEED

■

VERY LOW SATURATION VOLTAGE AND

HIGH GAIN

APPLICATION

■

SWITCHING REGULATORS

■

MOTOR CONTROL

■

HIGH FREQUENCY AND EFFICENCY

CONVERTERS

DESCRIPTION

The BUT70W is a Multiepitaxial planar NPN

transistor in TO-247 plastic package.

It’s intented for use in high frequency and

efficiency converters such us motor controllers

and industrial equipment.

®

INTERNAL SCHEMATIC DIAGRAM

February 2002

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CEV

Collector-emitter Voltage (V

BE

= -1.5V) 200 V

V

CEO

Collector-emitter Voltage (I

B

= 0) 125 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 7 V

I

E(RMS)

Emitter Current 40 A

I

EM

Emitter Peak Current 120 A

I

B

Base Current 8 A

I

BM

Base Peak Current 24 A

P

tot

Total Power Dissipation at T

case

< 25

o

C

200 W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max Operating Junction Temperature 150

o

C

1

2

3

TO-247

1/4

THERMAL DATA

R

thj-case

Thermal Resistance Junction-case Max 0.63

o

C/W

ELECTRICAL CHARACTERISTICS

(T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CER

Collector Cut-off

Current (R

BE

= 5Ω)

V

CE

= 200 V

V

CE

= 200 V T

C

= 100

o

C

1

5

mA

mA

I

CEV

Collector Cut-off

Current (V

BE

= -1.5V)

V

CE

= 200 V

V

CE

= 200 V T

C

= 100

o

C

1

4

mA

mA

I

EBO

Emitter Cut-off

Current (I

C

= 0)

V

EB

= 5 V 1 mA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 0.2 A L = 25 mH 125 V

V

(BR)EBO

Emitter-Base

Breakdown Voltage

(I

C

= 0)

I

E

= 50 mA 7 V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 70 A I

B

= 7 A

I

C

= 70 A I

B

= 7 A T

C

= 100

o

C

I

C

= 35 A I

B

= 1.75 A

I

C

= 35 A I

B

= 1.75 A T

C

= 100

o

C

0.9

1.5

0.9

1.2

V

V

V

V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 70 A I

B

= 7 A

I

C

= 70 A I

B

= 7 A T

C

= 100

o

C

I

C

= 35 A I

B

= 1.75 A

I

C

= 35 A I

B

= 1.75 A T

C

= 100

o

C

1.8

1.9

1.4

1.4

V

V

V

V

di

c

/d

t

∗ Rated of Rise of

on-state Collector

Current

V

CC

= 100 V R

C

= 0 I

B1

= 3.5 A

t

p

= 3 µs T

C

= 100

o

C

140 A/µs

∗

Pulsed: Pulse duration = 300

µ

s, duty cycle < 2 %

INDUCTIVE LOAD

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

s

t

f

t

c

Storage Time

Fall Time

Cross Over Time

I

C

= 35 A V

CC

= 90 V

V

BB

= -5 V R

B2

= 1.4 Ω

Ι

B1

= 1.75 A L

C

= 0.15 mH

V

CLAMP

= 125V T

C

= 100

o

C

1.8

0.2

0.35

µs

µs

µs

BUT70W

2/4

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055

F3 2 2.4 0.079 0.094

F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779

L3 14.2 14.8 0.559 0.582

L4 34.6 1.362

L5 5.5 0.217

M 2 3 0.079 0.118

P025P

TO-247 MECHANICAL DATA

BUT70W

3/4

BUT70W

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT NPN High Power

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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BUT70W