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CLH02(TE16R,Q)

P1-P3P4-P5
CLH02
2006-11-08
1
TOSHIBA High-Efficiency Rectifier Silicon Epitaxial Type
CLH02
○ Switching Mode Power Supply Applications
• Forward voltage: V
FM
= 1.3 V (Max.)
• Average forward current: I
F (AV)
= 3 A
• Repetitive peak reverse voltage: V
RRM
= 300 V
• Surface-mount package
L−FLAT” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
300 V
Average forward current I
F(AV)
3 (Note 1) A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
50 (50 Hz) A
Junction temperature T
j
−40~150 °C
Storage temperature range T
stg
−40~150 °C
Note 1: Tℓ = 125°C Rectangular waveform : (α = 180°)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
FM (1)
I
FM
=0.7 A (pulse test) ⎯ 0.85 ⎯
V
FM (2)
I
FM
= 1.0A (pulse test) ⎯ 0.89 ⎯
V
Peak forward voltage
V
FM (3)
I
FM
= 3.0 A (pulse test) ⎯ 1.05 1.3
Repetitive peak reverse current I
RRM
V
RRM
= 300 V (pulse test) ⎯ ⎯ 10 μA
Reverse recovery time t
rr
I
F
= 2A, di/dt = − 50A/μs ⎯ ⎯ 35 ns
Forward recovery time t
fr
I
F
= 1.0 A ⎯ ⎯ 100 ns
Themal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board (board size:50mm x 50mm)
(board thickness:1.6t)
(soldering land)
Cathode:5.7mm x 6.2mm
Anode :4.5mm x 3.4mm
⎯ ⎯ 100 °C/W
Themal resistance
(junction to lead)
R
th (j-ℓ)
⎯ ⎯ ⎯ 5 °C/W
Unit: mm
3
.
2±0
.
2
①
②
① アノード
② カソード
②
CATHODE
①
ANODE
JEDEC ⎯
JEITA ⎯
TOSHIBA 3-4F1A
Weight: 0.15 g (typ.)
CLH02
2006-11-08
2
Marking
Abbreviation Code Part No.
H02 CLH02
Standard Soldering Pad
Handling Precaution
1) The absolute maximum rating denotes the absolute maximum ratings, which are rated values that must not
be exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit incorporating this device:
V
RRM
: Use this rating with reference to (1) above. The V
RRM
has a temperature coefficient of 0.1%/°C.
Take this temperature coefficient into account when designing a device at low temperature.
I
F (AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum
rating of I
F(AV)
and that Tj be below 120°C.When using this device, take the margin into
consideration by using an allowable Ta (max)-I
F (AV)
curve.
I
FSM: This rating specifies the non-repetitive peak current. This applies to abnormal operation only.
When using
a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
I
FSM: This rating specifies the non-repetitive peak current. This applies to abnormal operation only,
When using
the device, design the circuit board and the soldering land size to match the appropriate thermal
resistance value.
T
j: Derate this rating when using the device to ensure high reliability.
We recommend that the device be
used at a Tj of below 120°C.
2) The thermal resistance between junction and ambient varies depending on the mounting condition of the
device. When using the device, design the circuit board and the soldering land size to match the appropriate
thermal resistance value.
3) See the Rectifiers databook for further information.
Unit: mm
2.6
2.5
1.8
4.8
2.9
5.9
CLH02
2006-11-08
3
Maximum allowable ambient temperature
Ta max (°C)
Instantaneous forward voltage v
F
(V)
i
F
– v
F
Instantaneous forward current i
F
(A)
Average forward current I
F (AV)
(A)
P
F (AV)
– I
F (AV)
Average forward power dissipation
P
F (AV)
(W)
Average forward current I
F (AV)
(A)
Tℓ max – I
F (AV)
Maximum allowable lead temperature
Tℓ max (°C)
Average forward current I
F (AV)
(A)
Ta ma x – I
F (AV)
Transient thermal impedance
r
th (j-a)
(°C/W)
Time t (s)
r
th (j-a)
– t
Pulse test
25°C
0.01
0.0 0.4 1.2
0.1
1
100
75°C
T
j
= 150°C
10
1.6 2.0 0.8
0 1 4 3 2
0.0
1.0
2.0
4.0
3.0
5
60
80
100
140
160
120
360° 0° α
Rectangular
waveform
α
α = 60° 180° 120° DC
0
1 0 2 4 3 5
40
20
60
20
40
80
100
120
140
0
0 1 3 5 4 2
0.1
100
10
0.3
0.5
30
50
300
500
0.001 1000 0.01 0.1 100 10 1
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(board thickness:1.6 t
(soldering land)
Cathode 5.7 mm × 6.2 mm
Anode 4.5 mm × 3.4 mm
0.003 0.03 0.3 3 30 300
1
5
3
1000
α = 60°
180°
120°
360° 0° α
Rectangular
waveform
α
DC
Conduction an
g
le
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(board thickness:1.6 t
(soldering land)
Cathode 5.7 mm × 6.2 mm
Anode 4.5 mm × 3.4 mm
360° 0° α
Rectangular
waveform
α
α = 60°
180°
120°
DC
Conduction an
g
leConduction an
g
le
P1-P3P4-P5

CLH02(TE16R,Q)

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