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IXBF32N300

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF32N300
Fig. 12. Maximum Transient Thermal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 32A
I
G
= 10mA
Fig. 11. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
500 1000 1500 2000 2500 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2009 IXYS CORPORATION, All Rights Reserved
IXBF32N300
IXYS REF: B_32N300(8P)03-02-09
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
0
100
200
300
400
500
600
700
800
15 20 25 30 35 40 45 50 55 60 65
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 2Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
350
400
450
500
550
600
650
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
50
55
60
65
70
75
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 64A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
200
300
400
500
600
700
800
900
1000
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 64A
I
C
= 32A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
15 20 25 30 35 40 45 50 55 60 65
I
C
- Amperes
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
0
100
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 64A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
200
300
400
500
600
700
800
900
1000
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 64A
I
C
= 32A
P1-P3P4-P5

IXBF32N300

Mfr. #:
Buy IXBF32N300
Manufacturer:
Littelfuse
Description:
IGBT Transistors
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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