NPN Silicon
Epitaxial Transistors
Features
• High DC Current Gain: h
FE
=600 Max.(V
CE
=6.0V, I
C
=1.0mA)
• High voltage: V
CEO
=50V
Maximum Ratings
Symbol Rating Rating Unit
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current 100 mA
P
C
Collector power dissipation 200 mW
T
J
Junction Temperature -55 to +150
O
C
T
STG
Storage Temperature -55 to +150
O
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
I
CBO
Collector Cutoff Current
(V
CB
=60Vdc,I
E
=0)
--- --- 0.1
µAdc
I
EBO
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
--- --- 0.1
µAdc
ON CHARACTERISTICS
h
F
DC Current Gain*
(I
C
=1.0mAdc, V
CE
=6.0Vdc) 135 ---600
---
V
CE(sat)
Collector Saturation Voltage*
(I
C
=100mAdc, I
B
=10mAdc) --- 0.15 0.3 Vdc
V
BE(SAT)
Base Saturation Voltage*
(I
C
=100mAdc,I
B
=10mAdc) --- 0.86 1.0 Vdc
V
BE
Base Emitter Voltage*
(V
CE
=6.0Vdc, I
C
=1.0mAdc) 0.55 0.62 0.65 Vdc
C
ob
Collector Capacitance
(V
CB
=6.0Vdc, I
E
=0, f=1.0MHz) --- 3.0 --- pF
f
T
Gain Bandwidth product
(V
CE
=6.0Vdc, I
E
=10mAdc) --- 250 --- MHz
hFE CLASSIFICATION
Marking L5 L6 L7
h
FE
135-270 200-400 300-600
* Pulse Test PW<350us, dut
c
cle<2%
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
G
H
.079
2.000
in
h
mm
.
1
.800
.035
.900
.
7
.950
.037
.950
K
Revision: C 2013/01/01
omponents
20736 Marilla Street Chatsworth
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MCC
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 4
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
2SC1623-L6
2SC1623-L7
2SC1623-L5
H
alogen free available upon request by adding suffix "-HF"
•
