Product Standards
Transistors with Built-in Resistor
DRA2533Q0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
k
k
Resistance
value
R1
3.1
R2
4.6
0.53 0.67 0.81 -
Emitter-base cutoff current (Collector open)
Resistance ratio R1/R2
Input resistance R1
Forward current transfer ratio hFE VCE = -10 V, IC = -100 mA
V
-0.5 V
-0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -50 mA
Vi(off) VCE = -5 V, IC = -100 μA
-2.7
Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -5 mA
50
-1 μA
-2 mA
-
IEBO VEB = -6 V, IC = 0
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -1 μA
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50
Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj °C
Total power dissipation PT 200 mW
150
Collector current IC -500 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
-30% 3.1 +30%
k
Max Unit
V
1of3
Unit: mm
Min Typ
SC-59A
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA2533Q0L
Silicon PNP epitaxial planar type
For digital circuits
Features
Marking Symbol:
SU
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
+150 °C
Parameter
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
