MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT1123) (NSBA114YF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
0.2
mAdc
CollectorBase Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140
Collector *Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
0.7 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.2 V, I
C
= 1.0 mA)
V
i(on)
1.4 0.9
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9
Vdc
Input Resistor R1 7.0 10 13
kW
Resistor Ratio R
1
/R
2
0.17 0.21 0.25
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3
1000
100
10
1
Figure 2. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
01234
V
in
, INPUT VOLTAGE (V)
56 7
Figure 6. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOREMITTER VOLTAGE (V)
I
C
/I
B
= 10
55°C
150°C
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150°C
55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030
0.1 1
10010
V
CE
= 10 V
25°C
150°C
55°C
10
010 20304050
100
10
1
0.1
150°C
55°C
9
8
7
6
5
4
3
2
1
0
MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3
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6
TYPICAL CHARACTERISTICS
NSBA114YF3
1000
100
10
1
Figure 7. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
01 2 3 4
V
in
, INPUT VOLTAGE (V)
567
Figure 11. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOREMITTER VOLTAGE (V)
I
C
/I
B
= 10
55°C
150°C
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150°C
55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030
0.1 1
10010
V
CE
= 10 V
25°C
150°C
55°C
7
010 20304050
100
10
1
0.1
150°C
55°C
6
5
4
3
2
1
0
11101112

DTA114YET1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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