© 2006 IXYS CORPORATION All rights reserved
IXTA160N10T
IXTP160N10T
IXYS REF:T_160N10T (5V) 6-15-06.xls
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
35
40
45
50
55
60
65
70
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
30
50
70
90
110
130
150
170
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
35
40
45
50
55
60
65
70
75
80
85
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
60
65
70
75
80
85
90
95
100
105
110
115
120
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 50A
I
D
= 25A
I
D
= 25A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
39
40
41
42
43
44
25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
44
47
50
53
56
59
62
65
68
71
74
77
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
30
40
50
60
70
80
90
100
110
120
130
140
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
40
55
70
85
100
115
130
145
160
175
190
205
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 25A
I
D
= 50A
