IXTV36N50PS Datasheet IXTQ36N50P, IXTH36N50P, IXTT36N50P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 500 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 500 V

V

GS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C36A

I

DM

T

C

= 25° C, pulse width limited by T

JM

108 A

I

AR

T

C

= 25° C36A

E

AR

T

C

= 25° C50mJ

E

AS

T

C

= 25° C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 3 Ω

P

D

T

C

= 25° C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque(TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220) 20..120/4.5..15 N/lb

Weight TO-247 6 g

TO-268 5 g

PLUS220 2 g

TO-3P 5.5 g

DS99228E(01/06)

PolarHV

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTH 36N50P

IXTQ 36N50P

IXTT 36N50P

IXTV 36N50P

IXTV 36N50PS

V

DSS

= 500 V

I

D25

= 36 A

R

DS(on)

≤≤

≤ 170 m

ΩΩ

Ω

Symbol Test Conditions Characteristic Values

(T

J

= 25° C unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 3.0 5.0 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

170 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

G = Gate D = Drain

S = Source TAB = Drain

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

TO-247 (IXTH)

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

G

S

D

PLUS220 (IXTV)

TO-3P (IXTQ)

G

D

S

(TAB)

PLUS220 SMD(IXTV..S)

D (TAB)

G

S

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 36N50P IXTQ 36N50P IXTT 36N50P

IXTV36N50P IXTV 36N50PS

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

Symbol Test Conditions Characteristic Values

(T

J

= 25° C unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 23 36 S

C

iss

5500 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 510 pF

C

rss

40 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

27 ns

t

d(off)

R

G

= 3 Ω (External) 75 ns

t

f

21 ns

Q

g(on)

85 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

30 nC

Q

gd

31 nC

R

thJC

0.23 ° C/W

R

thCS

(TO-247 and TO-3P) 0.21 ° C/W

(PLUS220) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 36 A

I

SM

Repetitive 108 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25 A, -di/dt = 100 A/µs 400 ns

V

R

= 100 V, V

GS

= 0 V

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

0 2 4 6 8 1012141618202224

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5.5V

5V

6V

6.5V

7V

Fig. 1. Output Characteristics

@ 25

º

C

0

4

8

12

16

20

24

28

32

36

01234567

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

5.5V

Characteristic Curves

IXTH 36N50P IXTQ 36N50P IXTT 36N50P

IXT V36N50P IXTV 36N50PS

Fig. 3. Output Characte ristics

@ 125

º

C

0

4

8

12

16

20

24

28

32

36

0246 810121416

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

4.5V

5V

5.5V

Fig. 4. R

DS(on

)

Norm alize d to I

D

= 18A

Value vs. Junction Tem perature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 36A

I

D

= 18A

V

GS

= 10V

Fig. 6. Drain Current vs . Case

Tem perature

0

5

10

15

20

25

30

35

40

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alize d to

I

D

= 18A Value vs. Drain Current

0.6

1

1.4

1.8

2.2

2.6

3

3.4

0 1020304050607080

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125ºC

T

J

= 25ºC

V

GS

= 10V

Fig. 7. Input Adm ittance

0

5

10

15

20

25

30

35

40

45

50

55

44.5 55.5 66.5 7

V

G S

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

-40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

0 102030405060708090

I

D

- Amperes

g

f s

- Siemens

T

J

= -40ºC

25ºC

125ºC

IXTV36N50PS

IXTV36N50PS

Products related to this Datasheet