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SJPL-H2VR

P1-P3P4-P5
SANKEN ELECTRIC CO., LTD. SJPL-H2
061114 1／5
61426-01
1. Scope
The present specifications shall apply to an SJPL-H2.
2. Outline
Type Silicon Diode
Structure Resin Molded
Applications High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
SANKEN ELECTRIC CO., LTD. SJPL-H2
061114 2／5
61426-01
4. Absolute maximum ratings
No.
Item Symbol
Unit Rating Conditions
1
Transient Peak Reverse Voltage
V
RSM
V 200
2
Peak Reverse Voltage
V
RM
V 200
3
Average Forward Current
I
F(AV)
A 2.0 Refer to Derating of 7
4
Peak Surge Forward Current
I
FSM
A 25
10msec.
Half sinewave, one shot
5
I
2
t Limiting Value
I
2
t A
2
s 3.1 1msec≤t≤10msec
6
Junction Temperature
T
j
°C -40~+150
7
Storage Temperature
T
stg
°C -40~+150
5. Electrical characteristics (Ta=25°C ，unless otherwise specified)
No.
Item Symbol
Unit Value Conditions
1 Forward Voltage Drop V
F
V 0.98 max. I
F
=2.0A
2 Reverse Leakage Current I
R
μA 50 max. V
R
=V
RM
3
Reverse Leakage Current Under
High Temperature
H･I
R
μA 200 max. V
R
=V
RM
, T
j
=150°C
4
Reverse Recovery Time
t
rr
1 ns 50 max.
I
F
=I
RP
=100mA
90% Recovery point, T
j
=25°C
t
rr
2 ns 35 max.
I
F
=100mA，I
RP
=200mA
75% Recovery point, T
j
=25°C
5
Thermal Resistance
R
th(j-l)
°C /W
20 max.
Between Junction and lead
SANKEN ELECTRIC CO., LTD. SJPL-H2
061114 3／5
61426-01
6. Characteristics
I
- P
F
P
F
(W)
Forward Power Dissipation (W)
0
1
2
3
0 0.5 1 1.5 2
I
F(AV)
(A)
Average Forward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
0
0.1
0.2
0 25 50 75 100 125 150 175 200
V
R
(V)
Reverse Voltage (V)
Tj=150℃
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150℃
t
T
1
-
t/T=5/6
sinewave
1
-
t/T=2/3
1-t/T=1/2
P1-P3P4-P5

SJPL-H2VR

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DIODE GEN PURP 200V 2A 2SMD
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