NXP Semiconductors
BTA316-800B
3Q Hi-Com Triac
BTA316-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 5 August 2014 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
- 16 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 140 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 150 A
I
2
t I
2
t for fusing
t
p
= 10 ms; SIN - 98
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
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0
5
10
15
20
0 2 4 6 8 10 12 14 16
I
T(RMS)
(A)
P
tot
(W)
α = 180°
120°
90°
60°
30°
conduction
angle,
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
