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STTH12002TV1

P1-P3P4-P5
1/5
STTH12002TV
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
®
I
F(AV)
2x60A
V
RRM
200 V
Tj (max) 150 °C
V
F
(typ) 0.73 V
t
rr
(typ) 35 ns
MAIN PRODUCT CHARACTERISTICS
K2
K1
A1
A2
ISOTOP
STTH12002TV1
A1
A2
K1
K2
Dual center tap rectifier suited for welding
equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
DESCRIPTION
■
Suited for welding and high power equipment
■
Very low forward losses
■
Low recovery times
■
High surge current capability
■
Insulated:
Insulating voltage = 2500 V
RMS
Capacitance < 45 pF
■ Low leakage current
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
F(RMS)
RMS forward current Per diode
100 A
I
F(AV)
Average forward current δ =0.5 Tc = 105°C Per diode
60 A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal per diode
700 A
T
stg
Storage temperature range
- 55 + 150 °C
Tj
Maximum operating junction temperature
150 °C
ABSOLUTE RATINGS (limiting values, per diode)
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STTH12002TV
2/5
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
Tj = 25°C V
R
=V
RRM
50 µA
Tj = 125°C
50 500
V
F
**
Forward voltage drop Tj = 25°C I
F
=60A
1.05 V
Tj = 25°C I
F
= 120 A
1.15
Tj = 150°C I
F
=60A
0.73 0.82
Tj = 150°C I
F
= 120 A
0.98
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.66 x I
F(AV)
+ 0.00266 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
Tj = 25°C I
F
=1A V
R
= 30V
dI
F
/dt = 200 A/µs
35 43 ns
I
RM
Reverse
recovery current
Tj = 125°C I
F
=60A V
R
= 160V
dI
F
/dt = 200 A/µs
10.4 13.5 A
t
fr
Forward
recovery time
Tj = 25°C I
F
=60A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
F
max
560 ns
V
FP
Forward
recovery voltage
Tj = 25°C I
F
=60A dI
F
/dt = 200 A/µs
2.5 V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case Per diode
0.76 °C/W
Per device
0.43
R
th (j-c)
Coupling
0.1 °C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
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STTH12002TV
3/5
0
50
100
150
200
250
300
350
400
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I(A)
M
T
δ
=tp/T
tp
I
M
P = 40W
P = 60W
P = 80W
δ
Fig. 1: Peak current versus duty cycle (per diode).
0
20
40
60
80
100
120
140
160
180
200
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V (V)
FM
I (A)
FM
T =150°C
j
T =25°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
Single pulse
t(s)
p
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
100
1000
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
50
100
150
200
250
300
350
400
450
500
550
600
650
10 100 1000
Q (nC)
rr
dI /dt(A/µs)
F
I =60A
F
V =160V
R
T =125°C
j
T =25°C
j
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
0
20
40
60
80
100
120
140
160
180
200
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
I (A)
FM
V (V)
FM
T =150°C
j
T =25°C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
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P1-P3P4-P5

STTH12002TV1

Mfr. #:
Buy STTH12002TV1
Manufacturer:
STMicroelectronics
Description:
DIODE MODULE 200V 60A ISOTOP
Lifecycle:
New from this manufacturer.
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