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NVGS3443T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 5
1 Publication Order Number:
NTGS3443T1/D
NTGS3443, NVGS3443
Power MOSFET
4.4 Amps, 20 Volts
P−Channel TSOP−6
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• These Devices are Pb−Free and are RoHS Compliant
• NVGS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 Volts
Gate−to−Source Voltage − Continuous V
GS
"12 Volts
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
244
0.5
−2.2
−10
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
128
1.0
−3.1
−14
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
R
q
JA
P
d
I
D
I
DM
62.5
2.0
−4.4
−20
°C/W
Watts
Amps
Amps
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
4.4 AMPERES
20 VOLTS
R
DS(on)
= 65 mW
3
4
1256
Device Package Shipping
†
ORDERING INFORMATION
NTGS3443T1G TSOP−6
(Pb−Free)
3000 / Tape & Reel
P−Channel
NVGS3443T1G TSOP−6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
443 = Specific Device Code
M = Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
443 M G
G
*Date Code orientation may vary depending
upon manufacturing location.
http://onsemi.com
1
NTGS3443, NVGS3443
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Notes 4 & 5)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −10 mA)
V
(BR)DSS
−20 − −
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −20 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −20 Vdc, T
J
= 70°C)
I
DSS
−
−
−
−
−1.0
−5.0
mAdc
Gate−Body Leakage Current
(V
GS
= −12 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +12 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mAdc)
V
GS(th)
−0.60 −0.95 −1.50
Vdc
Static Drain−Source On−State Resistance
(V
GS
= −4.5 Vdc, I
D
= −4.4 Adc)
(V
GS
= −2.7 Vdc, I
D
= −3.7 Adc)
(V
GS
= −2.5 Vdc, I
D
= −3.5 Adc)
R
DS(on)
−
−
−
0.058
0.082
0.092
0.065
0.090
0.100
W
Forward Transconductance
(V
DS
= −10 Vdc, I
D
= −4.4 Adc)
g
FS
− 8.8 −
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 565 − pF
Output Capacitance C
oss
− 320 − pF
Reverse Transfer Capacitance C
rss
− 120 − pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time
(V
DD
= −20 Vdc, I
D
= −1.0 Adc,
V
GS
= −4.5 Vdc, R
g
= 6.0 W)
t
d(on)
− 10 25 ns
Rise Time t
r
− 18 45 ns
Turn−Off Delay Time t
d(off)
− 30 50 ns
Fall Time t
f
− 31 50 ns
Total Gate Charge
(V
DS
= −10 Vdc, V
GS
= −4.5 Vdc,
I
D
= −4.4 Adc)
Q
tot
− 7.5 15 nC
Gate−Source Charge Q
gs
− 1.4 − nC
Gate−Drain Charge Q
gd
− 2.9 − nC
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage (I
S
= −1.7 Adc, V
GS
= 0 Vdc) V
SD
− −0.83 −1.2 Vdc
Reverse Recovery Time
(I
S
= −1.7 Adc, dI
S
/dt = 100 A/ms)
t
rr
− 30 − ns
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
NTGS3443, NVGS3443
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0
4
1.6
6
21.20.8
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
2
0
0.4
8
V
GS
= −5 V
V
GS
= −3 V
V
GS
= −2.5 V
V
GS
= −4.5 V
V
GS
= −3.5 V
V
GS
= −2 V
V
GS
= −1.5 V
T
J
= 25°C
4
0
6
2
8
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0.6 2.2 2.61.81.4 31
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
≥ = −10 V
1.5
0.4
0.35
0.3
0.25
3.532.5
0.2
0.15
0.1
0.05
0
2 4 4.5 5
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (OHMS)
I
D
= −4.4 A
T
J
= 25°C
0.1
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (OHMS)
04532617
0.06
0.12
0.04
0.08
0.14
0.16
8
T
J
= 25°C
V
GS
= −2.5 V
V
GS
= −4.5 V
V
GS
= −2.7 V
1.5
1.4
1.2
1.3
1.1
1
0.9
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
−50 50250−25 75 125100
I
D
= −4.4 A
V
GS
= −4.5 V
0.8
0.7
150
0.01
0.1
1
10
100
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
DSS,
LEAKAGE (nA)
016201284
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
V
GS
= 0 V
V
GS
= −4 V
P1-P3P4-P6

NVGS3443T1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 20V 2A 0.065R
Lifecycle:
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