NDB603AL Datasheet NDB603AL, NDP603AL | P1-P3

January 1996

NDP603AL / NDB603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

______________________________________________________________________________

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Symbol Parameter NDP603AL NDB603AL Units

V

DSS

Drain-Source Voltage 30 V

V

GSS

Gate-Source Voltage - Continuous ± 20 V

I

D

Drain Current - Continuous 25 (Note 1) A

- Pulsed 100

P

D

Total Power Dissipation @ T

C

= 25°C 50 W

Derate above 25°C 0.4 W/°C

T

J

,T

STG

Operating and Storage Temperature Range -65 to 175 °C

T

L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

275 °C

THERMAL CHARACTERISTICS

R

θ

JC

Thermal Resistance, Junction-to-Case 2.5 °C/W

R

θ

JA

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

NDP603AL.SAM

These N-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. These devices are

particularly suited for low voltage applications such as

DC/DC converters and high efficiency switching circuits

where fast switching, low in-line power loss, and

resistance to transients are needed.

25A, 30V. R

DS(ON)

= 0.022Ω @ V

GS

=10V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

High density cell design for extremely low R

DS(ON)

.

175°C maximum junction temperature rating.

S

D

G

Electrical Characteristics (T

C

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE AVALANCHE RATINGS (Note 2)

W

DSS

Single Pulse Drain-Source Avalanche

Energy

V

DD

= 15 V, I

D

= 25 A 100 mJ

I

AR

Maximum Drain-Source Avalanche Current 25 A

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

30 V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 24 V, V

GS

= 0 V

10 µA

I

GSSF

Gate - Body Leakage, Forward

V

GS

= 20 V, V

DS

= 0 V

100 nA

I

GSSR

Gate - Body Leakage, Reverse V

GS

= -20 V, V

DS

= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

1.1 1.5 3 V

T

J

= 125

o

C 0.7 1.1 2.2

V

DS

= V

GS

, I

D

= 10 mA

1.4 1.85 3

T

J

= 125

o

C 1 1.5 2.2

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

= 10 V, I

D

= 25 A

0.019 0.022

Ω

T

J

= 125

o

C 0.028 0.045

V

GS

= 4.5 V, I

D

= 10 A

0.031 0.04

I

D(on)

On-State Drain Current V

GS

= 10 V, V

DS

= 10 V 60 A

V

GS

= 4.5 V, V

DS

= 10 V

15

g

FS

Forward Transconductance V

DS

= 10 V, I

D

= 25 A 18 S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS

= 15 V, V

GS

= 0 V,

f = 1.0 MHz

1100 pF

C

oss

Output Capacitance 540 pF

C

rss

Reverse Transfer Capacitance 175 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time V

DD

= 15 V, I

D

= 25 A,

V

GS

= 10 V, R

GEN

= 24 Ω

15 30 ns

t

r

Turn - On Rise Time 70 110 ns

t

D(off)

Turn - Off Delay Time 90 150 ns

t

f

Turn - Off Fall Time 80 130 ns

Q

g

Total Gate Charge V

DS

= 10 V,

I

D

= 25 A, V

GS

= 10 V

28 40 nC

Q

gs

Gate-Source Charge 5 7 nC

Q

gd

Gate-Drain Charge 7 10 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current 25 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= 25 A (Note 2)

1.3 V

Note:

1. Maximum DC current limited by the package.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDP603AL.SAM

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Drain Current Variation with Gate

Voltage and Temperature.

0 20 40 60 80

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 4V

GS

D

R , NORMALIZED

DS(on)

8.0

7.0

4.5

6.0

5.0

10

-50 -25 0 25 50 75 100 125 150 175

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V =10V

GS

I = 25A

D

R , NORMALIZED

DS(ON)

0 20 40 60 80

0.5

1

1.5

2

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

25°C

-55°C

D

V = 10V

GS

R , NORMALIZED

DS(on)

1 2 3 4 5 6

0

10

20

30

40

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25

125

V = 10V

DS

GS

D

T = -55°C

J

0.5 1 1.5 2 2.5

0

0.01

0.02

0.03

0.04

0.05

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 10V

DS

GS

D

T = 125°C

J

25°C

-55°C

0 1 2 3 4 5

0

20

40

60

80

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.0

4.0

8.0

7.0

5.0

V =10V

GS

DS

D

6.0

4.5

Figure 6. Sub-threshold Drain Current Variation

with Gate Voltage and Temperature.

NDB603AL

NDB603AL

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