DMN3900UFA-7B

DMN3900UFA
Document number: DS35736 Rev. 4 - 2
4 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN3900UFA
0.2
0.4
0.6
0.8
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V = 4.5V
I = 500mA
GS
D
V= V
I = 200mA
GS
D
2.5
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T= 25°C
A
1
10
100
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V = 15V
I= A
DS
D
200m
0.001
0.01
0.1
1
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = 25°C
J(max)
A
Single Pulse
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
5 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN3900UFA
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
R (t) = r(t) * R
R = 330°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
X2-DFN0806-3
Dim Min Max Typ
A 0.375 0.40 0.39
A1 0 0.05 0.02
A3 - - 0.10
b 0.10 0.20 0.15
D 0.55 0.65 0.60
D1 0.35 0.45 0.40
E 0.75 0.85 0.80
E1 0.20 0.30 0.25
e - - 0.35
K - - 0.20
L 0.20 0.30 0.25
All Dimensions in mm
A
A3
Seating Plane
A1
D
E
b (2x)
L (2x)
e
D1
E1
Pin#1
R0.075
K
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
6 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN3900UFA
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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Copyright © 2013, Diodes Incorporated
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Dimensions
Value
(in mm)
C 0.350
X 0.200
X1 0.450
X2 0.550
Y 0.375
Y1 0.475
Y2 1.000
X1
X2
Y2
Y1
Y (2x)
X (2x)
C

DMN3900UFA-7B

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-CH MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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