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BAP70AM,115

P1-P3P4-P6P7-P8
1. Product profile
1.1 General description
Four planar PIN diode array in SOT363 small SMD plastic package.
1.2 Features and benefits
High voltage current controlled RF resistor for RF attenuators
Low diode capacitance
Very low series inductance
Low distortion
1.3 Applications
RF attenuators
(SAT) TV applications
Car radio applications
2. Pinning information
3. Ordering information
BAP70AM
Silicon PIN diode array
Rev. 4 — 7 March 2014 Product data sheet
Table 1. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 anode diode 1
2 cathode diode 2
3 anode diode 3 / cathode diode 4
4 anode diode 4
5 cathode diode 3
6 anode diode 2 / cathode diode 1
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Table 2. Ordering information
Type number Package
Name Description Version
BAP70AM - plastic surface-mounted package; 6 leads SOT363
BAP70AM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 7 March 2014 2 of 8
NXP Semiconductors
BAP70AM
Silicon PIN diode array
4. Marking
5. Limiting values
6. Thermal characteristics
Table 3. Marking
Type number Marking code Description
BAP70AM N9* * = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 50 V
I
F
forward current - 100 mA
P
tot
total power dissipation T
sp
=90C- 300mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature 65 +150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction
to solder point
260 K/W
BAP70AM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 7 March 2014 3 of 8
NXP Semiconductors
BAP70AM
Silicon PIN diode array
7. Characteristics
Table 6. Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=50mA - 0.9 1.1 V
I
R
reverse current V
R
= 50 V - - < 100 nA
C
d
diode capacitance see Figure 1; f = 1 MHz;
V
R
=0V - 570 - fF
V
R
=1V - 400 - fF
V
R
=5V - 270 - fF
V
R
= 20 V - 200 250 fF
r
D
diode forward resistance see Figure 2; f = 100 MHz;
I
F
= 0.5 mA - 77 100
I
F
=1mA - 40 50
I
F
=10mA - 5.4 7
I
F
=100mA - 1.4 1.9
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
= 100 ; measured at
I
R
=3mA
-1.25-s
L
S
series inductance I
F
= 100 mA; f = 100 MHz - 0.6 - nH
f=1MHz; T
j
=25C. f = 100 MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Diode forward resistance as a function of
forward current; typical values
9
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P1-P3P4-P6P7-P8

BAP70AM,115

Mfr. #:
Buy BAP70AM,115
Manufacturer:
NXP Semiconductors
Description:
PIN Diodes QUAD AM PIN DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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