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SQ3419EV-T1_GE3

P1-P3P4-P6P7-P9P10-P12
SQ3419EV
www.vishay.com
Vishay Siliconix
S16-0619-Rev. B, 11-Apr-16
1
Document Number: 68210
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
Marking Code: 8V
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) -40
R
DS(on)
() at V
GS
= -10 V 0.058
R
DS(on)
() at V
GS
= -4.5 V 0.092
I
D
(A) -6.9
Configuration Single
Package TSOP-6
Top View
TSOP-6 Single
1
D
2
D
3
G
D
6
D
5
S
4
P-Channel MOSFET
(4) S
(1, 2, 5, 6) D
(3) G
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
-6.9
A
T
C
= 125 °C -4
Continuous Source Current (Diode Conduction) I
S
-6.3
Pulsed Drain Current I
DM
-27
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-16.5
Single Pulse Avalanche Energy E
AS
13.6 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
5
W
T
C
= 125 °C 1.6
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
30
SQ3419EV
www.vishay.com
Vishay Siliconix
S16-0619-Rev. B, 11-Apr-16
2
Document Number: 68210
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
= -5 V -10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -2.5 A - 0.048 0.058
V
GS
= -10 V I
D
= -2.5 A, T
J
= 125 °C - 0.075 -
V
GS
= -10 V I
D
= -2.5 A, T
J
= 175 °C - 0.086 -
V
GS
= -4.5 V I
D
= -2 A - 0.076 0.092
Forward Transconductance
b
g
fs
V
DS
= -20 V, I
D
= -4 A - 8 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -20 V, f = 1 MHz
- 742 990
pF Output Capacitance C
oss
- 136 180
Reverse Transfer Capacitance C
rss
-77100
Total Gate Charge
c
Q
g
V
GS
= -4.5 V V
DS
= -20 V, I
D
= -4 A
- 7.5 11.3
nC Gate-Source Charge
c
Q
gs
-2.5-
Gate-Drain Charge
c
Q
gd
-3.9-
Gate Resistance R
g
f = 1 MHz 2.6 5.3 7.9
Turn-On Delay Time
c
t
d(on)
V
DD
= -20 V, R
L
= 5
I
D
-4 A, V
GEN
= -10 V, R
g
= 1
-812
ns
Rise Time
c
t
r
-2436
Turn-Off Delay Time
c
t
d(off)
-2639
Fall Time
c
t
f
-3147
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---27A
Forward Voltage V
SD
I
F
= -1.6 A, V
GS
= 0 V - -0.8 -1.2 V
SQ3419EV
www.vishay.com
Vishay Siliconix
S16-0619-Rev. B, 11-Apr-16
3
Document Number: 68210
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
6
12
18
24
30
0246810
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 6 V
V
GS
= 2 V
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 5 V
0
2
4
6
8
10
0246810
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.00
0.05
0.10
0.15
0.20
0.25
0 6 12 18 24 30
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
=10 V
V
GS
= 4.5V
0
6
12
18
24
30
0246810
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
3
6
9
12
15
0246810
g
fs
-Transconductance (S )
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
200
400
600
800
1000
1200
0 10203040
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P9P10-P12

SQ3419EV-T1_GE3

Mfr. #:
Buy SQ3419EV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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