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MUR20040CT
P1-P2
V
RRM
= 50 V - 600 V
I
F
= 200 A
Features
• High Surge Capability
Twin Tow
er Package
• Ty
pes up to 600 V V
RRM
Parameter
Sy
mbol
MUR20040CT (R)
Unit
Re
p
etitive
p
eak reverse
V
400
V
MUR20040CT thru MUR20060CT
R
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise specif
ied ("R" devices hav
e leads reversed
)
Conditions
Silicon Super Fast
Recov
er
y
Diode
MUR20060CT (R)
600
pp
voltage
V
RRM
400
V
RMS rev
erse voltage
V
RMS
280
V
DC blocking voltage
V
DC
400
V
Continuous forward current
I
F
200
A
Operating temperature
T
j
-40 to 175
°C
Storage temperature
T
stg
-40 to 175
°C
Parameter
Sy
mbol
MUR20040CT (R)
Unit
Diode forward v
oltage
1.3
25
μ
A
1m
A
Recovery Time
Max
imum reverse recovery
time
T
RR
90
nS
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
1
110
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 50 A, T
j
= 25 °C
T
C
≤
140 °C
Conditions
400
T
C
= 25 °C, t
p
= 8.3 ms
25
Electrical characteristics, at
Tj = 25 °C, unl
ess otherw
ise specified
Surge non-repetitive forward
current, Half Sine W
ave
I
F,SM
Reverse current
I
R
V
F
200
400
-40 to 175
-40 to 175
1.7
MUR20060CT (R)
600
420
600
www.genesicsemi.com
1
MUR20040CT thru MUR20060CT
R
www.genesicsemi.com
2
P1-P2
MUR20040CT
Mfr. #:
Buy MUR20040CT
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 400V 200A Super Fast Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
Products related to this Datasheet
MUR20040CT
MUR20060CT
MUR20060CTR
MUR20040CTR