Data Sheet 7 Revision 2.2
2018-03-15
BGA5H1BN6
18dB High Gain Low Noise Amplifier for LTE Highband
Electrical Characteristics
Table 4 Electrical Characteristics V
CC
= 2.8V
1)
T
A
= 25 °C, V
CC
= 2.8 V, V
C,BP
= 2.8 V, V
C,OFF
= 0 V, f = 2300 - 2690 MHz
1) Based on the application described in Chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.5 2.8 3.6 V –
Control voltages V
C
1.0 – V
CC
V High gain mode
0–0.4VBypass mode
Supply current I
CC
– 9.8 11.6 mA High gain mode
– 87 120 µA Bypass mode
Insertion power gain
f = 2500 MHz
|S
21
|
2
16.6 18.3 20.0 dB High gain mode
-6.5 -5.2 -3.9 dB Bypass mode
Noise figure
2)
f = 2500 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF – 0.7 1.2 dB High gain mode
– 5.2 6.5 dB Bypass mode
Input return loss
3)
f = 2500 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
7 10 – dB High gain mode
58–dBBypass mode
Output return loss
3)
f = 2500 MHz
RL
OUT
10 19 – dB High gain mode
35–dBBypass mode
Reverse isolation
3)
f = 2500 MHz
1/|S
12
|
2
25 36 – dB High gain mode
3.9 5.2 – dB Bypass mode
Power on time
4)6)
4) Gain changed to >90% of gain difference (in dB)
t
S
– 3 7 µs OFF to High gain mode
Inband input 1dB-compression
point, f = 2500 MHz
3)
IP
1dB
-20 -16 – dBm High gain mode
-6 -2 – dBm Bypass mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 2500 MHz, f
2
= f
1
+/- 1 MHz
5) Input power HG = -30 dBm for each tone; input power BP = -10 dBm for each tone
IIP
3
-11 -6 – dBm High gain mode
1 6 – dBm Bypass mode
Stability
6)
6) Guaranteed by device design; not tested in production
k > 1 – – f = 20 MHz ... 10 GHz
