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SI7141DP-T1-GE3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Vishay Siliconix
Si7141DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.002
0.004
0.006
0.008
0.010
012345678 910
I
D
=25A
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
0.01
100
1
100
0.01
0.1
1ms
10 s
10 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
DC
BVDSS Limited
1s
100 ms
Limited byR
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Vishay Siliconix
Si7141DP
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
40
80
120
160
200
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Case
0
25
50
75
100
125
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.6
1.2
1.8
2.4
3.0
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Vishay Siliconix
Si7141DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65596
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 54 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
P1-P3P4-P6P7-P7

SI7141DP-T1-GE3

Mfr. #:
Buy SI7141DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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