DF2S6.8UCT(TPL3) Datasheet DF2S6.8UCT(TPL3), DF2S6.8UCT,L3F | P1-P3

DF2S6.8UCT

1

ESD Protection Diodes Silicon Epitaxial Planar

DF2S6.8UCT

Start of commercial production

2010-04

1.

1. Applications

Applications

• ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

CST2

1: Cathode

2: Anode

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

a

= 25

= 25



)

)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

Storage temperature

Symbol

V

ESD

T

j

T

stg

Rating

±8

150

-55 to 150

Unit

kV



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2014-04-15

Rev.3.0

DF2S6.8UCT

2

4.

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

a

= 25

= 25



)

)

V

RWM

: Working peak reverse

voltage

V

BR

: Reverse breakdown voltage

I

BR

: Reverse breakdown current

V

R

: Reverse voltage

I

R

: Reverse current

V

F

: Forward voltage

I

F

: Forward current

V

C

: Clamping voltage

I

PP

: Peak pulse current

R

DYN

: Dynamic resistance

Fig.

Fig. 4.1

4.1

4.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Dynamic resistance

Total capacitance

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Symbol

V

RWM

(1)

V

BR

(1)

I

R

(1)

R

DYN

C

t

V

RWM

(2)

V

BR

(2)

I

R

(2)

Note

(Note 1)

Test Condition



I

BR

= 1 mA

V

RWM

= 5 V

V

R

= 0 V, f = 1 MHz



I

BR

= 1 mA

V

RWM

= 19 V

Min



5.3



22



Typ.



6.8



0.3

1.6



25



Max

5



0.1



19



0.5

Unit

V

µA

Ω

pF

V

µA

Note 1: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at I

PP

between 3 A to 8 A.

5.

5. Guaranteed ESD Protection (Note)

Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±8 kV

Note: Criterion: No damage to devices.

2014-04-15

Rev.3.0

DF2S6.8UCT

3

6.

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

Marking Code

RA

Part Number

DF2S6.8UCT

7.

7. Land Pattern Dimensions (for reference only)

Land Pattern Dimensions (for reference only)

Fig.

Fig. 7.1

7.1

7.1 Land Pattern Dimensions (Unit: mm)

Land Pattern Dimensions (Unit: mm)

2014-04-15

Rev.3.0

DF2S6.8UCT(TPL3)

DF2S6.8UCT(TPL3)

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